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M68AW256DN70ND1T PDF预览

M68AW256DN70ND1T

更新时间: 2024-11-09 09:58:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器光电二极管
页数 文件大小 规格书
23页 200K
描述
256KX16 STANDARD SRAM, 70ns, PDSO44, PLASTIC, TSOP2-44

M68AW256DN70ND1T 数据手册

 浏览型号M68AW256DN70ND1T的Datasheet PDF文件第2页浏览型号M68AW256DN70ND1T的Datasheet PDF文件第3页浏览型号M68AW256DN70ND1T的Datasheet PDF文件第4页浏览型号M68AW256DN70ND1T的Datasheet PDF文件第5页浏览型号M68AW256DN70ND1T的Datasheet PDF文件第6页浏览型号M68AW256DN70ND1T的Datasheet PDF文件第7页 
M68AW256D  
4 Mbit (256K x16) 3.0V Asynchronous SRAM  
FEATURES SUMMARY  
SUPPLY VOLTAGE: 2.7 to 3.6V  
Figure 1. Packages  
256K x 16 bits SRAM with OUTPUT ENABLE  
EQUAL CYCLE and ACCESS TIME: 55ns,  
70ns  
44  
SINGLE BYTE READ/WRITE  
LOW STANDBY CURRENT  
LOW V  
DATA RETENTION: 1.5V  
CC  
TRI-STATE COMMON I/O  
1
AUTOMATIC POWER DOWN  
TSOP44 Type IND)  
DUAL CHIP ENABLE for EASY DENSITY  
EXPANSION  
FBGA  
TFBGA48 (ZB)  
6 x 7 mm  
February 2004  
1/23  

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