Datasheet > M58LW064ANH

M58LW064ANH

更新时间： 2024-11-12 22:36:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
53页	318K
描述
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

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M58LW064ANH 数据手册

M58LW064A

M58LW064B

64 Mbit (x16 and x16/x32, Block Erase)

Low Voltage Flash Memories

PRODUCT PREVIEW

■ M58LW064A x16 organisation,

■ M58LW064B x16/x32 selectable

■ MULTI-BIT CELL for HIGH DENSITY and LOW

COST

■ SUPPLY VOLTAGE

– V = 2.7V to 3.6V Supply Voltage

TSOP56 (NF)

TSOP86 II (NH)

– V

= 2.7V to 3.6V or 1.8V to 2.5V

DDQ

Input/Output Supply Voltage

■ PIPELINED SYNCHRONOUS BURST

INTERFACE

FBGA

■ SYNCHRONOUS/ASYNCHRONOUS READ

– Synchronous Burst read

– Asynchronous Random and Latch Enabled

Controlled Read, with Page Read

PQFP80 (T)

LBGA54 (ZA)

■ ACCESS TIME

– Synchronous Burst Read up to 66MHz

Figure 1. Logic Diagram

– Asynchronous Page Mode Read 150/25ns,

Random Read 150ns

DD DDQ

■ PROGRAMMING TIME

– 16 Word or 8 Double-Word Write Buffer

– 12us Word effective programming time

■ MEMORY BLOCKS

A1-A22

DQ0-DQ31

– 64 Equal blocks of 1 Mbit

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

M58LW064A

M58LW064B

– Device Code M58LW064A: 17h

– Device Code M58LW064B: 14h

DESCRIPTION

The M58LW064 is a non-volatile Flash memory

that may be erased electrically at the block level

and programmed in-system on a 16 Word or 8

Double-Word basis using a 2.7V to 3.6V supply for

the circuit and a supply down to 1.8V for the Input

and Output buffers. The M58LW064A is organised

as 4M by 16 bit. The M58LW064B has 4M by 16

bit or 2M by 32 bit organisation selectable by the

Word Organisation WORD input. Both devices are

internally configured as 64 blocks of 1 Mbit each.

WORD ⁽¹⁾

AI03223

Note: 1. Only on M58LW064B.

May 2000

1/53

This is preliminary information on a new product now in development. Details are subject to change without notice.

12 3 4 5 6 7...53

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与M58LW064ANH相关器件

型号	品牌	获取价格	描述	数据表
M58LW064AT	STMICROELECTRONICS	获取价格	64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064AZA	STMICROELECTRONICS	获取价格	64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064B	STMICROELECTRONICS	获取价格	64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064B120N1T	STMICROELECTRONICS	获取价格	2MX32 FLASH 3V PROM, 120ns, PDSO56, 14 X 20 MM, PLASTIC, TSOP-56
M58LW064B120N6	STMICROELECTRONICS	获取价格	Flash, 2MX32, 120ns, PDSO56, 14 X 20 MM, PLASTIC, TSOP-56
M58LW064B120N6T	STMICROELECTRONICS	获取价格	2MX32 FLASH 3V PROM, 120ns, PDSO56, 14 X 20 MM, PLASTIC, TSOP-56
M58LW064B120ZA1	STMICROELECTRONICS	获取价格	Flash, 2MX32, 120ns, PBGA80, 1 MM PITCH, TBGA-80
M58LW064B120ZA6	STMICROELECTRONICS	获取价格	Flash, 2MX32, 120ns, PBGA80, 1 MM PITCH, TBGA-80
M58LW064B150NF1T	STMICROELECTRONICS	获取价格	64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
M58LW064B150NF6T	STMICROELECTRONICS	获取价格	64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories