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M58LW064C110N6T PDF预览

M58LW064C110N6T

更新时间: 2024-09-24 22:51:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
62页 420K
描述
64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory

M58LW064C110N6T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:14 X 20 MM, PLASTIC, TSOP-56
针数:56Reach Compliance Code:not_compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.25最长访问时间:110 ns
其他特性:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE命令用户界面:YES
通用闪存接口:YES数据轮询:NO
JESD-30 代码:R-PDSO-G56JESD-609代码:e0
长度:18.4 mm内存密度:67108864 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:64
端子数量:56字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP56,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
页面大小:4 words并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:2/3.3,3/3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:64K最大待机电流:0.00004 A
子类别:Flash Memories最大压摆率:0.03 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:NO
类型:NOR TYPE宽度:14 mm
Base Number Matches:1

M58LW064C110N6T 数据手册

 浏览型号M58LW064C110N6T的Datasheet PDF文件第2页浏览型号M58LW064C110N6T的Datasheet PDF文件第3页浏览型号M58LW064C110N6T的Datasheet PDF文件第4页浏览型号M58LW064C110N6T的Datasheet PDF文件第5页浏览型号M58LW064C110N6T的Datasheet PDF文件第6页浏览型号M58LW064C110N6T的Datasheet PDF文件第7页 
M58LW064C  
64 Mbit (4Mb x16, Uniform Block, Burst)  
3V Supply Flash Memory  
PRELIMINARY DATA  
FEATURES SUMMARY  
WIDE x16 DATA BUS for HIGH BANDWIDTH  
SUPPLY VOLTAGE  
Figure 1. Packages  
– V = 2.7 to 3.6V core supply voltage for Pro-  
DD  
gram, Erase and Read operations  
– V  
= 1.8 to V for I/O Buffers  
DD  
DDQ  
SYNCHRONOUS/ASYNCHRONOUS READ  
– Synchronous Burst read  
TSOP56 (N)  
14 x 20 mm  
– Asynchronous Random Read  
– Asynchronous Address Latch Controlled  
Read  
– Page Read  
TBGA  
ACCESS TIME  
– Synchronous Burst Read up to 56MHz  
– Asynchronous Page Mode Read 110/25ns  
– Random Read 110ns  
TBGA64 (ZA)  
10 x 13 mm  
PROGRAMMING TIME  
– 16 Word Write Buffer  
– 12µs Word effective programming time  
64 UNIFORM 64 KWord MEMORY BLOCKS  
BLOCK PROTECTION/ UNPROTECTION  
PROGRAM and ERASE SUSPEND  
128bit PROTECTION REGISTER  
COMMON FLASH INTERFACE  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Device Code M58LW064C : 8820h  
December 2002  
1/61  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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