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M58LW064D110N1T PDF预览

M58LW064D110N1T

更新时间: 2024-11-12 22:51:39
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意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
51页 349K
描述
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

M58LW064D110N1T 数据手册

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M58LW064D  
64 Mbit (8Mb x8, 4Mb x16, Uniform Block)  
3V Supply Flash Memory  
PRELIMINARY DATA  
FEATURES SUMMARY  
WIDE x8 or x16 DATA BUS for HIGH  
Figure 1. Packages  
BANDWIDTH  
SUPPLY VOLTAGE  
– V = V  
= 2.7 to 3.6V for Program, Erase  
DDQ  
DD  
and Read operations  
ACCESS TIME  
– Random Read 110ns  
TSOP56 (N)  
14 x 20 mm  
– Page Mode Read 110/25ns  
PROGRAMMING TIME  
– 16 Word Write Buffer  
– 12µs Word effective programming time  
64 UNIFORM 64 KWord/128KByte MEMORY  
TBGA  
BLOCKS  
BLOCK PROTECTION/ UNPROTECTION  
PROGRAM and ERASE SUSPEND  
128 bit PROTECTION REGISTER  
COMMON FLASH INTERFACE  
TBGA64 (ZA)  
10 x 13 mm  
100, 000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Device Code M58LW064D: 0017h  
December 2002  
1/51  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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