5秒后页面跳转
M58LW064D110N1F PDF预览

M58LW064D110N1F

更新时间: 2024-09-24 22:51:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
50页 783K
描述
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

M58LW064D110N1F 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TSOP包装说明:14 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-56
针数:56Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.25Is Samacsys:N
最长访问时间:110 ns备用内存宽度:8
命令用户界面:YES通用闪存接口:YES
数据轮询:NOJESD-30 代码:R-PDSO-G56
长度:18.4 mm内存密度:67108864 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:64
端子数量:56字数:4194304 words
字数代码:4000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:4MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP56,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
页面大小:4/8 words并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:128K最大待机电流:0.00004 A
子类别:Flash Memories最大压摆率:0.03 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:NO类型:NOR TYPE
宽度:14 mmBase Number Matches:1

M58LW064D110N1F 数据手册

 浏览型号M58LW064D110N1F的Datasheet PDF文件第2页浏览型号M58LW064D110N1F的Datasheet PDF文件第3页浏览型号M58LW064D110N1F的Datasheet PDF文件第4页浏览型号M58LW064D110N1F的Datasheet PDF文件第5页浏览型号M58LW064D110N1F的Datasheet PDF文件第6页浏览型号M58LW064D110N1F的Datasheet PDF文件第7页 
M58LW064D  
64 Mbit (8Mb x8, 4Mb x16, Uniform Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
WIDE x8 or x16 DATA BUS for HIGH  
Figure 1. Packages  
BANDWIDTH  
SUPPLY VOLTAGE  
VDD = VDDQ = 2.7 to 3.6V for Program,  
Erase and Read operations  
ACCESS TIME  
Random Read 110ns  
Page Mode Read 110/25ns  
TSOP56 (N)  
14 x 20 mm  
PROGRAMMING TIME  
16 Word Write Buffer  
12µs Word effective programming time  
64 UNIFORM 64 KWord/128KByte MEMORY  
BLOCKS  
ENHANCED SECURITY  
TBGA  
Block Protection/ Unprotection  
PEN signal for Program Erase Enable  
128 bit Protection Register with 64 bit  
Unique Code in OTP area  
V
TBGA64 (ZA)  
10 x 13 mm  
PROGRAM and ERASE SUSPEND  
COMMON FLASH INTERFACE  
100, 000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
Manufacturer Code: 0020h  
Device Code M58LW064D: 0017h  
PACKAGES  
Compliant with Lead-Free Soldering  
Processes  
Lead-Free Versions  
September 2004  
1/50  

与M58LW064D110N1F相关器件

型号 品牌 获取价格 描述 数据表
M58LW064D110N1T STMICROELECTRONICS

获取价格

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110N6 STMICROELECTRONICS

获取价格

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110N6E STMICROELECTRONICS

获取价格

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110N6F STMICROELECTRONICS

获取价格

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110N6P STMICROELECTRONICS

获取价格

4MX16 FLASH 3V PROM, 110ns, PDSO56, 14 X 20 MM, PLASTIC, TSOP-56
M58LW064D110N6T STMICROELECTRONICS

获取价格

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110ZA STMICROELECTRONICS

获取价格

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110ZA1 STMICROELECTRONICS

获取价格

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110ZA1E STMICROELECTRONICS

获取价格

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110ZA1F STMICROELECTRONICS

获取价格

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory