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M58LW128A150N1 PDF预览

M58LW128A150N1

更新时间: 2024-11-13 12:59:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
65页 878K
描述
8MX16 FLASH 3V PROM, 150ns, PDSO56, 14 X 20 MM, PLASTIC, TSOP-56

M58LW128A150N1 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:14 X 20 MM, PLASTIC, TSOP-56
针数:56Reach Compliance Code:not_compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.82Is Samacsys:N
最长访问时间:150 ns其他特性:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
命令用户界面:YES通用闪存接口:YES
数据轮询:NOJESD-30 代码:R-PDSO-G56
JESD-609代码:e0长度:18.4 mm
内存密度:134217728 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:128端子数量:56
字数:8388608 words字数代码:8000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:8MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP56,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE页面大小:8 words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:2/3.3,3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:64K
最大待机电流:0.00012 A子类别:Flash Memories
最大压摆率:0.05 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:NO类型:NOR TYPE
宽度:14 mmBase Number Matches:1

M58LW128A150N1 数据手册

 浏览型号M58LW128A150N1的Datasheet PDF文件第2页浏览型号M58LW128A150N1的Datasheet PDF文件第3页浏览型号M58LW128A150N1的Datasheet PDF文件第4页浏览型号M58LW128A150N1的Datasheet PDF文件第5页浏览型号M58LW128A150N1的Datasheet PDF文件第6页浏览型号M58LW128A150N1的Datasheet PDF文件第7页 
M58LW128A  
M58LW128B  
128 Mbit (8Mb x16 or 4Mb x32, Uniform Block, Burst)  
3V Supply Flash Memories  
PRELIMINARY DATA  
FEATURES SUMMARY  
WIDE DATA BUS for HIGH BANDWIDTH  
– M58LW128A: x16  
Figure 1. Packages  
– M58LW128B: x16/x32  
SUPPLY VOLTAGE  
– V = 2.7 to 3.6V core supply voltage for Pro-  
DD  
gram, Erase and Read operations  
TSOP56 (N)  
14 x 20mm  
– V  
= 1.8 to V for I/O Buffers  
DD  
DDQ  
SYNCHRONOUS/ASYNCHRONOUS READ  
– Synchronous Burst read  
– Pipelined Synchronous Burst Read  
– Asynchronous Random Read  
TBGA  
– Asynchronous Address Latch Controlled  
Read  
TBGA64 (ZA)  
10 x 13mm  
– Page Read  
ACCESS TIME  
– Synchronous Burst Read up to 66MHz  
– Asynchronous Page Mode Read 150/25ns  
– Random Read 150ns  
TBGA  
PROGRAMMING TIME  
TBGA80 (ZA)  
10 x 13mm  
– 16 Word or 8 Double-Word Write Buffer  
– 12µs Word effective programming time  
128 UNIFORM 64 KWord MEMORY BLOCKS  
BLOCK PROTECTION/ UNPROTECTION  
PROGRAM and ERASE SUSPEND  
OTP SECURITY AREA  
COMMON FLASH INTERFACE  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Device Code M58LW128A: 8818h  
– Device Code M58LW128B: 8819h  
February 2003  
1/65  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

M58LW128A150N1 替代型号

型号 品牌 替代类型 描述 数据表
E28F128J3C-150 INTEL

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