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M58LW064B120N1T PDF预览

M58LW064B120N1T

更新时间: 2024-09-25 14:43:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
60页 360K
描述
2MX32 FLASH 3V PROM, 120ns, PDSO56, 14 X 20 MM, PLASTIC, TSOP-56

M58LW064B120N1T 技术参数

生命周期:Transferred零件包装代码:TSOP
包装说明:14 X 20 MM, PLASTIC, TSOP-56针数:56
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.52
最长访问时间:120 ns其他特性:SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE
备用内存宽度:16JESD-30 代码:R-PDSO-G56
长度:18.4 mm内存密度:67108864 bit
内存集成电路类型:FLASH内存宽度:32
功能数量:1端子数量:56
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2MX32
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL编程电压:3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL类型:NOR TYPE
宽度:14 mmBase Number Matches:1

M58LW064B120N1T 数据手册

 浏览型号M58LW064B120N1T的Datasheet PDF文件第2页浏览型号M58LW064B120N1T的Datasheet PDF文件第3页浏览型号M58LW064B120N1T的Datasheet PDF文件第4页浏览型号M58LW064B120N1T的Datasheet PDF文件第5页浏览型号M58LW064B120N1T的Datasheet PDF文件第6页浏览型号M58LW064B120N1T的Datasheet PDF文件第7页 
M58LW064A  
M58LW064B  
64 Mbit (4Mb x16 or 2Mb x32, Uniform Block)  
3V Supply Flash Memories  
PRELIMINARY DATA  
FEATURES SUMMARY  
WIDE x16/x32 DATA BUS for HIGH  
Figure 1. Packages  
BANDWIDTH  
– M58LW064A x16 DATA BITS  
– M58LW064B x16/x32 DATA BITS  
SUPPLY VOLTAGE  
– V = 2.7 to 3.6V core supply voltage for Pro-  
DD  
gram, Erase and Read operations  
TSOP56 (N)  
14 x 20 mm  
– V  
= 1.8 to V for I/O Buffers  
DD  
DDQ  
SYNCHRONOUS/ASYNCHRONOUS READ  
– Synchronous Burst read  
TBGA  
– Pipelined Synchronous Burst Read  
– Asynchronous Random Read  
– Asynchronous Address Latch Controlled  
Read  
TBGA64 (ZA)  
8x8 ball array  
– Page Read  
ACCESS TIME  
– Synchronous Burst Read up to 66MHz  
TBGA  
– Asynchronous Page Mode Read 120/25ns,  
150/25ns  
TBGA80 (ZA)  
8x10 ball array  
– Random Read 120ns, 150ns  
PROGRAMMING TIME  
– 16 Word or 8 Double-Word Write Buffer  
– 12µs Word effective programming time  
64 UNIFORM 64 KWord MEMORY BLOCKS  
BLOCK PROTECTION/ UNPROTECTION  
PROGRAM and ERASE SUSPEND  
OTP SECURITY AREA  
COMMON FLASH INTERFACE  
PROGRAM/ERASE CYCLES per BLOCK  
– 100,000 for 150ns  
– 10,000 for 120ns  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code M58LW064A: 17h  
– Device Code M58LW064B: 14h  
June 2001  
1/60  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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