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M58LW064C110N6 PDF预览

M58LW064C110N6

更新时间: 2024-11-13 13:10:07
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意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
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62页 420K
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M58LW064C110N6 数据手册

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M58LW064C  
64 Mbit (4Mb x16, Uniform Block, Burst)  
3V Supply Flash Memory  
PRELIMINARY DATA  
FEATURES SUMMARY  
WIDE x16 DATA BUS for HIGH BANDWIDTH  
SUPPLY VOLTAGE  
Figure 1. Packages  
– V = 2.7 to 3.6V core supply voltage for Pro-  
DD  
gram, Erase and Read operations  
– V  
= 1.8 to V for I/O Buffers  
DD  
DDQ  
SYNCHRONOUS/ASYNCHRONOUS READ  
– Synchronous Burst read  
TSOP56 (N)  
14 x 20 mm  
– Asynchronous Random Read  
– Asynchronous Address Latch Controlled  
Read  
– Page Read  
TBGA  
ACCESS TIME  
– Synchronous Burst Read up to 56MHz  
– Asynchronous Page Mode Read 110/25ns  
– Random Read 110ns  
TBGA64 (ZA)  
10 x 13 mm  
PROGRAMMING TIME  
– 16 Word Write Buffer  
– 12µs Word effective programming time  
64 UNIFORM 64 KWord MEMORY BLOCKS  
BLOCK PROTECTION/ UNPROTECTION  
PROGRAM and ERASE SUSPEND  
128bit PROTECTION REGISTER  
COMMON FLASH INTERFACE  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Device Code M58LW064C : 8820h  
December 2002  
1/61  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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