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M54HC10_04 PDF预览

M54HC10_04

更新时间: 2024-11-04 05:00:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 输入元件
页数 文件大小 规格书
8页 107K
描述
RAD-HARD TRIPLE 3-INPUT NAND GATE

M54HC10_04 数据手册

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M54HC10  
RAD-HARD TRIPLE 3-INPUT NAND GATE  
HIGH SPEED:  
= 8ns (TYP.) at V = 6V  
t
PD  
CC  
LOW POWER DISSIPATION:  
= 1µA(MAX.) at T =25°C  
I
CC  
A
HIGH NOISE IMMUNITY:  
= V = 28% V (MIN.)  
V
NIH  
NIL  
CC  
DILC-14  
FPC-14  
SYMMETRICAL OUTPUT IMPEDANCE:  
|I | = I = 4mA (MIN)  
OH  
OL  
BALANCED PROPAGATION DELAYS:  
t
t
ORDER CODES  
PACKAGE  
PLH  
PHL  
WIDE OPERATING VOLTAGE RANGE:  
(OPR) = 2V to 6V  
FM  
EM  
V
CC  
DILC  
FPC  
M54HC10D  
M54HC10K  
M54HC10D1  
M54HC10K1  
PIN AND FUNCTION COMPATIBLE WITH  
54 SERIES 10  
SPACE GRADE-1: ESA SCC QUALIFIED  
50 krad QUALIFIED, 100 krad AVAILABLE ON  
REQUEST  
NO SEL UNDER HIGH LET HEAVY IONS  
IRRADIATION  
The internal circuit is composed of 3 stages  
including buffer output, which enables high noise  
immunity and stable output.  
All inputs are equipped with protection circuits  
against static discharge and transient excess  
voltage.  
DEVICE FULLY COMPLIANT WITH  
SCC-9201-107  
DESCRIPTION  
The M54HC10 is an high speed CMOS TRIPLE  
3-INPUT NAND GATE fabricated with silicon gate  
2
C MOS technology.  
PIN CONNECTION  
March 2004  
1/8  

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