Datasheet > M52D128168A_1

M52D128168A_1

更新时间： 2024-11-28 05:46:55

品牌	Logo	应用领域
晶豪 - ESMT		动态存储器
页数	文件大小	规格书
47页	1134K
描述
2M x 16 Bit x 4 Banks Synchronous DRAM

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中文翻译

获取价格

数据手册

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M52D128168A_1 数据手册

ESMT

M52D128168A

Operation Temperature Condition -40°C~85°C

Mobile SDRAM

2M x 16 Bit x 4 Banks

Synchronous DRAM

FEATURES

ORDERING INFORMATION

1.8V power supply

LVTTL compatible with multiplexed address

Four banks operation

MRS cycle with address key programs

- CAS Latency (2 & 3)

- Burst Length (1, 2, 4, 8 & full page)

- Burst Type (Sequential & Interleave)

EMRS cycle with address

MAX

PRODUCT NO.

PACKAGE Comments

FREQ.

M52D128168A-7.5TIG

M52D128168A-7.5BIG

M52D128168A-10TIG

M52D128168A-10BIG

133MHz

54 TSOP II

Pb-free

133MHz 54 Ball FBGA

100MHz 54 TSOP II

100MHz 54 Ball FBGA

All inputs are sampled at the positive going edge of the

system clock

Special function support

PASR (Partial Array Self Refresh)

TCSR (Temperature Compensated Self Refresh)

DS (Driver Strength)

DQM for masking

Auto & self refresh

64ms refresh period (4K cycle)

GENERAL DESCRIPTION

The M52D128168A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words

by 16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on

every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth, high performance memory system applications.

PIN ASSIGNMENT (Top View)

V^DD

DQ0

V^DDQ

DQ1

DQ2

V^SSQ

DQ3

DQ4

V^DDQ

53 DQ15

52 V^SSQ

V^SS

VSSQ

VDDQ

DQ0

VDD

VSS

DQ15

VDDQ

VSSQ

VDDQ

DQ2

DQ4

DQ1

DQ3

DQ14

DQ12

DQ13

DQ11

51 DQ14

50 DQ13

V^DDQ

DQ12

47 DQ11

46 V^SSQ

VSSQ

VDD

DQ6

DQ10

DQ8

DQ9

VDDQ

VSS

CKE

DQ5

DQ7

45 DQ10

44 DQ9

DQ5 10

DQ6 11

LDQM

42 DQ8

41 V^SS

V^DDQ

V^SSQ

DQ7 13

V^DD14

UDQM

CLK

A11

CAS

BA0

RAS

BA1

LDQM 15

WE 16

40 NC

39 UDQM

38 CLK

37 CKE

36 NC

CAS 17

RAS 18

CS 19

A10

54 Ball FBGA

(8x8mm)

(mm ball pitch)

VSS

VDD

A¹¹

BA0 20

BA1 21

A¹⁰/AP 22

VDD

VSS

Elite Semiconductor Memory Technology Inc.

Publication Date: Sep. 2008

Revision: 1.0 1/47

12 3 4 5 6 7...47

中文翻译

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与M52D128168A_1相关器件

型号	品牌	获取价格	描述	数据表
M52D128168A-10BG	ESMT	获取价格	2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-10BIG	ESMT	获取价格	2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-10TG	ESMT	获取价格	2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-10TIG	ESMT	获取价格	2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-5BIG2E	ESMT	获取价格	Synchronous DRAM, 8MX16, CMOS, PBGA54, FBGA-54
M52D128168A-6BG2E	ESMT	获取价格	Synchronous DRAM, 8MX16, 5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FRE
M52D128168A-6BIG2E	ESMT	获取价格	Synchronous DRAM, 8MX16, CMOS, PBGA54, FBGA-54
M52D128168A-7.5BG	ESMT	获取价格	2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-7.5BIG	ESMT	获取价格	2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-7.5TG	ESMT	获取价格	2M x 16 Bit x 4 Banks Synchronous DRAM

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