Datasheet > M52D16161A-15TG

M52D16161A-15TG

更新时间： 2024-02-23 21:08:25

品牌	Logo	应用领域
晶豪 - ESMT		动态存储器
页数	文件大小	规格书
29页	937K
描述
DRAM,

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技术参数
数据手册

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M52D16161A-15TG 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

M52D16161A-15TG 数据手册

ESMT

M52D16161A

SDRAM

512K x 16Bit x 2Banks

Synchronous DRAM

FEATURES

GENERAL DESCRIPTION

The M52D16161A is 16,777,216 bits synchronous high

data rate Dynamic RAM organized as 2 x 524,288 words by

16 bits, fabricated with high performance CMOS technology.

Synchronous design allows precise cycle control with the

use of system clock I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst length and programmable latencies allow the same

device to be useful for a variety of high bandwidth, high

performance memory system applications.

ꢀ

1.8V power supply

LVCMOS compatible with multiplexed address

Dual banks operation

MRS cycle with address key programs

CAS Latency (1, 2 & 3 )

Burst Length (1, 2, 4, 8 & full page)

Burst Type (Sequential & Interleave)

ꢀ

EMRS cycle with address key programs.

All inputs are sampled at the positive going edge of the

system clock

ꢀ

Burst Read Single-bit Write operation

Special Function Support.

ORDERING INFORMATION

PASR (Partial Array Self Refresh )

TCSR (Temperature compensated Self Refresh)

DS (Driver Strength)

MAX

Freq.

Part NO.

Package

Comments

M52D16161A-10TG 100MHz 50 PIN TSOP(II)

M52D16161A-15TG 66MHz 50 PIN TSOP(II)

M52D16161A-10BG 100MHz 60 Ball VFBGA

Pb-free

ꢀ

DQM for masking

Auto & self refresh

32ms refresh period (2K cycle)

PIN CONFIGURATION (TOP VIEW)

DQ0

DQ15

VDD

VSS

VDD

VSS

DQ0

DQ1

VSSQ

DQ2

DQ3

VDDQ

DQ4

DQ5

VSSQ

DQ6

DQ7

VDDQ

LDQM

DQ15

DQ14

VSSQ

DQ13

DQ12

VDDQ

DQ11

DQ10

VSSQ

DQ9

DQ8

VDDQ

N.C/RFU

UDQM

CLK

CKE

N.C

VDDQ

VSSQ

DQ1

DQ2

DQ14

DQ13

VSSQ

VDDQ

DQ4

DQ3

DQ5

DQ12

DQ10

DQ9

DQ11

VDDQ

VSSQ

VDDQ

DQ6

DQ7

DQ8

CAS

RAS

UDQM

LDQM

CLK

RAS

CAS

A10/AP

CKE

50PIN TSOP(II)

(400mil x 825mil)

(0.8 mm PIN PITCH)

A11

VDD

VSS

A10

60 Ball VFBGA

(6.4x10.1mm)

(0.65mm ball pitch)

VSS

VDD

Elite Semiconductor Memory Technology Inc.

Publication Date : Apr. 2006

Revision : 1.4 1/29

12 3 4 5 6 7...29

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