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M52D16161A-7.5TIG PDF预览

M52D16161A-7.5TIG

更新时间: 2024-02-10 23:29:10
品牌 Logo 应用领域
晶豪 - ESMT 动态存储器手机
页数 文件大小 规格书
32页 888K
描述
512K x 16Bit x 2Banks Mobile Synchronous DRAM

M52D16161A-7.5TIG 技术参数

生命周期:Contact Manufacturer零件包装代码:TSOP2
包装说明:TSOP2,针数:50
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.36
访问模式:DUAL BANK PAGE BURST最长访问时间:6 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-PDSO-G50
长度:20.95 mm内存密度:16777216 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:16
功能数量:1端口数量:1
端子数量:50字数:1048576 words
字数代码:1000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE认证状态:Not Qualified
座面最大高度:1.2 mm自我刷新:YES
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

M52D16161A-7.5TIG 数据手册

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ESMT  
M52D16161A  
Operation Temperature Condition -40°C~85°C  
Mobile SDRAM  
512K x 16Bit x 2Banks  
Mobile Synchronous DRAM  
FEATURES  
GENERAL DESCRIPTION  
The M52D16161A is 16,777,216 bits synchronous high data  
rate Dynamic RAM organized as 2 x 524,288 words by 16 bits,  
z
z
z
z
1.8V power supply  
LVCMOS compatible with multiplexed address  
Dual banks operation  
fabricated  
with high performance CMOS technology.  
Synchronous design allows precise cycle control with the use of  
system clock I/O transactions are possible on every clock cycle.  
Range of operating frequencies, programmable burst length and  
programmable latencies allow the same device to be useful for a  
variety of high bandwidth, high performance memory system  
applications.  
MRS cycle with address key programs  
-
-
-
CAS Latency (2 & 3 )  
Burst Length (1, 2, 4, 8 & full page)  
Burst Type (Sequential & Interleave)  
z
z
EMRS cycle with address key programs.  
All inputs are sampled at the positive going edge of the  
system clock  
z
z
Burst Read Single-bit Write operation  
Special Function Support.  
ORDERING INFORMATION  
-
-
-
PASR (Partial Array Self Refresh )  
TCSR (Temperature compensated Self Refresh)  
DS (Driver Strength)  
Product ID  
Max Freq.  
Package  
Comments  
Pb-free  
M52D16161A-6TIG  
166MHz 50 Pin TSOP(II)  
z
z
z
DQM for masking  
Auto & self refresh  
32ms refresh period (2K cycle)  
M52D16161A-7.5TIG 133MHz 50 Pin TSOP(II)  
Pb-free  
M52D16161A-10TIG  
M52D16161A-6BIG  
100MHz 50 Pin TSOP(II)  
166MHz 60 Ball VFBGA  
Pb-free  
Pb-free  
Pb-free  
Pb-free  
M52D16161A-7.5BIG 133MHz 60 Ball VFBGA  
M52D16161A-10BIG 100MHz 60 Ball VFBGA  
1
2
3
4
5
6
7
DQ0  
DQ15  
VDD  
A
B
VSS  
PIN CONFIGURATION (TOP VIEW)  
VDDQ  
VSSQ  
DQ1  
DQ2  
DQ14  
DQ13  
VSSQ  
VDDQ  
VDD  
1
VSS  
C
D
E
F
50  
49  
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
DQ0  
DQ1  
VSSQ  
DQ2  
DQ3  
VDDQ  
DQ4  
DQ5  
VSSQ  
DQ6  
DQ7  
VDDQ  
LDQM  
WE  
2
DQ15  
DQ14  
VSSQ  
DQ13  
DQ12  
VDDQ  
DQ11  
DQ10  
VSSQ  
DQ9  
DQ8  
VDDQ  
N.C/RFU  
UDQM  
CLK  
CKE  
N.C  
3
DQ4  
DQ3  
DQ5  
DQ12  
DQ10  
DQ9  
DQ11  
4
5
VDDQ  
VSSQ  
6
7
VSSQ  
NC  
VDDQ  
NC  
DQ6  
DQ7  
8
9
G
H
J
DQ8  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
NC  
NC  
NC  
NC  
NC  
WE  
UDQM  
LDQM  
CAS  
RAS  
CS  
NC  
CLK  
NC  
A9  
RAS  
NC  
CAS  
CS  
K
L
CKE  
BA  
A9  
A10/AP  
A0  
A8  
NC  
A0  
NC  
BA  
A8  
M
N
P
R
A7  
A1  
A6  
A10  
A7  
A2  
A5  
A3  
A4  
50PIN TSOP(II)  
(400mil x 825mil)  
(0.8 mm PIN PITCH)  
A1  
A6  
A5  
A4  
A2  
A3  
VDD  
VSS  
60 Ball VFBGA  
(6.4x10.1mm)  
(0.65mm ball pitch)  
VSS  
VDD  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Sep. 2009  
Revision : 1.1 1/32  

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