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M25P80-VMW3TP PDF预览

M25P80-VMW3TP

更新时间: 2024-11-20 20:35:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
41页 258K
描述
1MX8 FLASH 2.7V PROM, PDSO8, 0.200 INCH, ROHS COMPLIANT, PLASTIC, SO-8

M25P80-VMW3TP 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOIC包装说明:SOP, SOP8,.3
针数:8Reach Compliance Code:compliant
风险等级:5.4最大时钟频率 (fCLK):40 MHz
数据保留时间-最小值:20耐久性:10000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:5.3 mm内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:1048576 words
字数代码:1000000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:1MX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.3
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified座面最大高度:2.03 mm
串行总线类型:SPI最大待机电流:0.00005 A
子类别:Flash Memories最大压摆率:0.015 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40类型:NOR TYPE
宽度:5.25 mm写保护:HARDWARE/SOFTWARE
Base Number Matches:1

M25P80-VMW3TP 数据手册

 浏览型号M25P80-VMW3TP的Datasheet PDF文件第2页浏览型号M25P80-VMW3TP的Datasheet PDF文件第3页浏览型号M25P80-VMW3TP的Datasheet PDF文件第4页浏览型号M25P80-VMW3TP的Datasheet PDF文件第5页浏览型号M25P80-VMW3TP的Datasheet PDF文件第6页浏览型号M25P80-VMW3TP的Datasheet PDF文件第7页 
M25P80  
8 Mbit, Low Voltage, Serial Flash Memory  
With 40MHz SPI Bus Interface  
FEATURES SUMMARY  
8 Mbit of Flash Memory  
Figure 1. Packages  
Page Program (up to 256 Bytes) in 1.4ms  
(typical)  
Sector Erase (512 Kbit) in 1s (typical)  
Bulk Erase (8 Mbit) in 10s (typical)  
2.7 to 3.6V Single Supply Voltage  
SPI Bus Compatible Serial Interface  
40MHz Clock Rate (maximum)  
Deep Power-down Mode 1µA (typical)  
Electronic Signature (13h)  
VDFPN8 (MP)  
(MLP8)  
SO16 (MF)  
300 mil width  
8
1
SO8 (MW)  
200 mil width  
August 2004  
1/41  
 
 

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