Datasheet > M25PE10-VMN6TP

M25PE10-VMN6TP

更新时间： 2024-11-07 15:17:59

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
63页	797K
描述
1Mb, 2Mb, Page-Erasable, Serial NOR Flash Memories with Byte Alterability, 75 MHz Serial Peripheral Interface, Standard Pinout

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数据手册

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M25PE10-VMN6TP 数据手册

M25PE20, M25PE10 Serial Flash Embedded Memory

Features

M25PE20/M25PE10 2Mb and 1Mb

3V NOR Serial Flash Memory

Serial Flash Memory with Byte Alterability, 75 MHz SPI bus, Standard

Pinout

Features

• 1Mb or 2Mb of page-erasable Flash memory

• 2.7V to 3.6V single supply voltage

• SPI bus compatible serial interface

• 75 MHz clock rate (maximum)

• Page size: 256 bytes

– Page write in 11ms (TYP)

– Page program in 0.8ms (TYP)

– Page erase in 10ms (TYP)

• Subsector erase: 32Kb

– Sector erase: 512Kb

– Bulk erase: 1Mb for M25PE10; 2Mb for M25PE20

• Deep power-down mode: 1µA (TYP)

• Electronic signature

– JEDEC standard 2-byte signature (8012h for

M25PE20; 8011h for M25PE10)

• Software write-protection on a 64KB sector basis

• More than 100,000 write cycles per sector

• More than 20 years of data retention

• Hardware write protection of the memory area se-

lected using the BP0 and BP1 bits

• Packages (RoHS compliant)

– SO8N (MN) 150 mil width

– VFQFPN8 (MP) 6mm x 5mm

• Automotive grade parts available

PDF: 09005aef845660ef

m25pe20_10.pdf - Rev. D 1/18 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

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与M25PE10-VMN6TP相关器件

型号	品牌	获取价格	描述	数据表
M25PE10-VMP6G	STMICROELECTRONICS	获取价格	1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50
M25PE10-VMP6G	NUMONYX	获取价格	1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus,
M25PE10-VMP6G	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
M25PE10-VMP6P	NUMONYX	获取价格	1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus,
M25PE10-VMP6P	STMICROELECTRONICS	获取价格	1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50
M25PE10-VMP6TG	NUMONYX	获取价格	1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus,
M25PE10-VMP6TG	STMICROELECTRONICS	获取价格	1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33
M25PE10-VMP6TG	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
M25PE10-VMP6TP	STMICROELECTRONICS	获取价格	1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33
M25PE10-VMP6TP	NUMONYX	获取价格	1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus,