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M25P80-VMW6TP

更新时间： 2024-11-19 22:15:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
41页	564K
描述
8 Mbit, Low Voltage, Serial Flash Memory With 40MHz SPI Bus Interface

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M25P80-VMW6TP 数据手册

M25P80

8 Mbit, Low Voltage, Serial Flash Memory

With 40MHz SPI Bus Interface

FEATURES SUMMARY

■

8 Mbit of Flash Memory

Figure 1. Packages

■

Page Program (up to 256 Bytes) in 1.4ms

(typical)

■

Sector Erase (512 Kbit) in 1s (typical)

Bulk Erase (8 Mbit) in 10s (typical)

2.7 to 3.6V Single Supply Voltage

SPI Bus Compatible Serial Interface

40MHz Clock Rate (maximum)

Deep Power-down Mode 1µA (typical)

Electronic Signature (13h)

VDFPN8 (MP)

(MLP8)

SO16 (MF)

300 mil width

SO8 (MW)

200 mil width

August 2004

1/41

12 3 4 5 6 7...41

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型号	品牌	替代类型	描述	数据表
M25P80-VMW6G	STMICROELECTRONICS	功能相似	8 Mbit, Low Voltage, Serial Flash Memory With 40MHz SPI Bus Interface

型号	品牌	获取价格	描述	数据表
M25PE10	SST	获取价格	1 and 2 Mbit,Low Voltage,Page-Erasable Serial Flash Memories with Byte-Alterability,33 MHz
M25PE10	NUMONYX	获取价格	1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus,
M25PE10-VD11	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
M25PE10-VMN3TPB	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
M25PE10-VMN6G	STMICROELECTRONICS	获取价格	1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50
M25PE10-VMN6G	NUMONYX	获取价格	1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus,
M25PE10-VMN6P	STMICROELECTRONICS	获取价格	1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50
M25PE10-VMN6P	NUMONYX	获取价格	1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus,
M25PE10-VMN6P	MICRON	获取价格	1Mb, 2Mb, Page-Erasable, Serial NOR Flash Memories with Byte Alterability, 75 MHz Serial P
M25PE10-VMN6TG	STMICROELECTRONICS	获取价格	1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33