是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | SOIC |
包装说明: | 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.57 |
最大时钟频率 (fCLK): | 33 MHz | 数据保留时间-最小值: | 20 |
耐久性: | 100000 Write/Erase Cycles | JESD-30 代码: | R-PDSO-G8 |
长度: | 4.9 mm | 内存密度: | 1048576 bit |
内存集成电路类型: | FLASH | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 8 |
字数: | 131072 words | 字数代码: | 128000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 128KX8 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOP |
封装等效代码: | SOP8,.25 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 并行/串行: | SERIAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 3/3.3 V |
编程电压: | 2.7 V | 认证状态: | Not Qualified |
座面最大高度: | 1.75 mm | 串行总线类型: | SPI |
最大待机电流: | 0.00001 A | 子类别: | Flash Memories |
最大压摆率: | 0.015 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 类型: | NOR TYPE |
宽度: | 3.9 mm | 写保护: | HARDWARE/SOFTWARE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M25PE10-VMN6P | STMICROELECTRONICS |
获取价格 |
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 | |
M25PE10-VMN6P | NUMONYX |
获取价格 |
1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, | |
M25PE10-VMN6P | MICRON |
获取价格 |
1Mb, 2Mb, Page-Erasable, Serial NOR Flash Memories with Byte Alterability, 75 MHz Serial P | |
M25PE10-VMN6TG | STMICROELECTRONICS |
获取价格 |
1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 | |
M25PE10-VMN6TG | NUMONYX |
获取价格 |
1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, | |
M25PE10-VMN6TP | STMICROELECTRONICS |
获取价格 |
1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 | |
M25PE10-VMN6TP | NUMONYX |
获取价格 |
1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, | |
M25PE10-VMN6TP | MICRON |
获取价格 |
1Mb, 2Mb, Page-Erasable, Serial NOR Flash Memories with Byte Alterability, 75 MHz Serial P | |
M25PE10-VMP6G | STMICROELECTRONICS |
获取价格 |
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 | |
M25PE10-VMP6G | NUMONYX |
获取价格 |
1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, |