Datasheet > M25PE10

M25PE10

更新时间： 2024-11-20 04:43:31

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存
页数	文件大小	规格书
64页	1231K
描述
1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

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中文翻译

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数据手册

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M25PE10 数据手册

M25PE20

M25PE10

1 and 2 Mbit, page-erasable serial Flash memories

with byte alterability, 75 MHz SPI bus, standard pinout

Features

■ 1 or 2 Mbit of page-erasable Flash memory

■ 2.7 V to 3.6 V single supply voltage

■ SPI bus compatible serial interface

■ 75 MHz clock rate (maximum)

■ Page size: 256 bytes

– Page Write in 11 ms (typical)

– Page Program in 0.8 ms (typical)

– Page Erase in 10 ms (typical)

SO8N (MN)

150 mil width

■ SubSector Erase (32 Kbits)

■ Sector Erase (512 Kbits)

■ Bulk Erase (1 Mbit for M25PE10, 2 Mbits for

M25PE20)

■ Deep Power-down mode 1 µA (typical)

■ Electronic signature

VFQFPN8 (MP)

6 × 5 mm

– JEDEC standard two-byte signature

(8012h for M25PE20, 8011h for M25PE10)

– Unique ID code (UID) with 16 bytes read-

only, available upon customer request only

in the T9HX process

■ Software write protection on a 64-Kbyte sector

basis

■ More than 100 000 Write cycles

■ More than 20 years data retention

■ Hardware write protection of the memory area

selected using the BP0 and BP1 bits

■ Package

– ECOPACK® (RoHS compliant)

March 2008

Rev 5

1/64

www.numonyx.com

12 3 4 5 6 7...64

中文翻译

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