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M25PE10-VMP6TG PDF预览

M25PE10-VMP6TG

更新时间: 2024-09-16 03:43:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
37页 483K
描述
1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out

M25PE10-VMP6TG 数据手册

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M25PE20  
M25PE10  
1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories  
with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out  
FEATURES SUMMARY  
Industrial Standard SPI Pin-out  
1 or 2 Mbit of Page-Erasable Flash Memory  
Page Write (up to 256 Bytes) in 11ms (typical)  
Page Program (up to 256 Bytes) in 1.2ms  
(typical)  
Figure 1. Packages  
Page Erase (256 Bytes) in 10ms (typical)  
Sector Erase (512 Kbit)  
2.7 to 3.6V Single Supply Voltage  
SPI Bus Compatible Serial Interface  
33MHz Clock Rate (maximum)  
Deep Power-down Mode 1µA (typical)  
Electronic Signature  
VDFPN8 (MP)  
6x5mm (MLP8)  
JEDEC Standard Two-Byte Signature  
(8012h for M25PE20  
8011h for M25PE10)  
More than 100,000 Write Cycles  
More than 20 Year Data Retention  
8
Hardware Write Protection of the Top Sector  
(64KB)  
1
Packages  
SO8N (MN)  
ECOPACK® (RoHS compliant)  
150 mil width  
October 2005  
1/37  

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