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M25P80-VMW6G PDF预览

M25P80-VMW6G

更新时间: 2024-11-06 15:18:03
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
53页 707K
描述
8Mb, Low-Voltage, Serial NOR Flash Memory with 75 MHz Serial Peripheral Interface

M25P80-VMW6G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP8,.3针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:7.8
Is Samacsys:N其他特性:LG-MAX
最大时钟频率 (fCLK):75 MHz数据保留时间-最小值:20
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
长度:6.05 mm内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:1
功能数量:1端子数量:8
字数:8388608 words字数代码:8000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8MX1
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.3封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:2.5 mm串行总线类型:SPI
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.015 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30类型:NOR TYPE
宽度:5.62 mm最长写入周期时间 (tWC):15 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

M25P80-VMW6G 数据手册

 浏览型号M25P80-VMW6G的Datasheet PDF文件第2页浏览型号M25P80-VMW6G的Datasheet PDF文件第3页浏览型号M25P80-VMW6G的Datasheet PDF文件第4页浏览型号M25P80-VMW6G的Datasheet PDF文件第5页浏览型号M25P80-VMW6G的Datasheet PDF文件第6页浏览型号M25P80-VMW6G的Datasheet PDF文件第7页 
Micron M25P80 Serial Flash Embedded Memory  
Features  
Micron M25P80 Serial Flash Embedded  
Memory  
8Mb, 3V  
• Electronic signature  
– JEDEC-standard 2-byte signature (2014h)  
– Unique ID code (UID) and 16 bytes of common  
Flash interface (CFI) data  
Features  
• SPI bus-compatible serial interface  
• 8Mb Flash memory  
• 75 MHz clock frequency (maximum)  
• 2.7V to 3.6V single supply voltage  
• Page program (up to 256 bytes) in 0.64ms (TYP)  
• Erase capability  
– Sector erase: 512Kb in 0.6 s (TYP)  
– Bulk erase: 8Mb in 8 s (TYP)  
– RES command, one-byte signature (13h) for  
backward compatibility  
• More than 100,000 write cycles per sector  
• More than 20 years data retention  
• Automotive-grade parts available  
• Packages (RoHS-compliant)  
• Write protection  
– SO8N (MN) 150 mils  
– Hardware write protection: protected area size  
defined by nonvolatile bits BP0, BP1, BP2  
• Deep power-down: 1µA (TYP)  
– SO8W (MW) 208 mils  
– VFDFPN8 (MP) MLP8 6mm x 5mm  
– UFDFPN8 (MC) MLP8 4mm x 3mm  
09005aef84566560  
m25p80.pdf - Rev. I 06/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
© 2011 Micron Technology, Inc. All rights reserved.  
1
Products and specifications discussed herein are subject to change by Micron without notice.  

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