是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | SOIC |
包装说明: | SOP, SOP8,.3 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.51 | 风险等级: | 7.8 |
Is Samacsys: | N | 其他特性: | LG-MAX |
最大时钟频率 (fCLK): | 75 MHz | 数据保留时间-最小值: | 20 |
耐久性: | 100000 Write/Erase Cycles | JESD-30 代码: | R-PDSO-G8 |
长度: | 6.05 mm | 内存密度: | 8388608 bit |
内存集成电路类型: | FLASH | 内存宽度: | 1 |
功能数量: | 1 | 端子数量: | 8 |
字数: | 8388608 words | 字数代码: | 8000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 8MX1 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOP |
封装等效代码: | SOP8,.3 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 并行/串行: | SERIAL |
峰值回流温度(摄氏度): | 260 | 电源: | 3/3.3 V |
编程电压: | 2.7 V | 认证状态: | Not Qualified |
座面最大高度: | 2.5 mm | 串行总线类型: | SPI |
最大待机电流: | 0.0001 A | 子类别: | Flash Memories |
最大压摆率: | 0.015 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 类型: | NOR TYPE |
宽度: | 5.62 mm | 最长写入周期时间 (tWC): | 15 ms |
写保护: | HARDWARE/SOFTWARE | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MT25QL128ABA1ESE-0SIT | MICRON |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M25P80-VMW6P | STMICROELECTRONICS |
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