Datasheet > M25P80-VMW6TGBA

M25P80-VMW6TGBA

更新时间： 2024-11-21 15:18:03

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
53页	707K
描述
8Mb, Low-Voltage, Serial NOR Flash Memory with 75 MHz Serial Peripheral Interface

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M25P80-VMW6TGBA 数据手册

Micron M25P80 Serial Flash Embedded Memory

Features

Micron M25P80 Serial Flash Embedded

Memory

8Mb, 3V

• Electronic signature

– JEDEC-standard 2-byte signature (2014h)

– Unique ID code (UID) and 16 bytes of common

Flash interface (CFI) data

Features

• SPI bus-compatible serial interface

• 8Mb Flash memory

• 75 MHz clock frequency (maximum)

• 2.7V to 3.6V single supply voltage

• Page program (up to 256 bytes) in 0.64ms (TYP)

• Erase capability

– Sector erase: 512Kb in 0.6 s (TYP)

– Bulk erase: 8Mb in 8 s (TYP)

– RES command, one-byte signature (13h) for

backward compatibility

• More than 100,000 write cycles per sector

• More than 20 years data retention

• Automotive-grade parts available

• Packages (RoHS-compliant)

• Write protection

– SO8N (MN) 150 mils

– Hardware write protection: protected area size

defined by nonvolatile bits BP0, BP1, BP2

• Deep power-down: 1µA (TYP)

– SO8W (MW) 208 mils

– VFDFPN8 (MP) MLP8 6mm x 5mm

– UFDFPN8 (MC) MLP8 4mm x 3mm

09005aef84566560

m25p80.pdf - Rev. I 06/18 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

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