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M25P80-VMW6P PDF预览

M25P80-VMW6P

更新时间: 2024-11-20 04:43:31
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存
页数 文件大小 规格书
52页 995K
描述
8 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface

M25P80-VMW6P 数据手册

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M25P80  
8 Mbit, low voltage, serial Flash memory  
with 75 MHz SPI bus interface  
Features  
SPI bus compatible serial interface  
75 MHz Clock rate (maximum)  
2.7 V to 3.6 V single supply voltage  
8 Mbit of Flash memory  
Page Program (up to 256 bytes) in 0.64 ms  
VFQFPN8 (MP)  
6 × 5 mm (MLP8)  
(typical)  
Sector Erase (512 Kbit) in 0.6 s (typical)  
Bulk Erase (8 Mbit) in 8 s (typical)  
Hardware Write protection: protected area size  
defined by three non-volatile bits (BP0, BP1  
and BP2)  
Deep Power-down mode 1 µA (typical)  
Electronic signatures  
SO8W (MW)  
208 mils width  
– JEDEC Standard two-byte signature  
(2014h)  
– Unique ID code (UID) +16 bytes of CFI  
data  
– RES instruction one-byte signature (13h)  
for backward compatibility  
More than 100 000 Program/Erase cycles per  
SO8N (MN)  
150 mils width  
sector  
More than 20 years’ data retention  
Packages  
– ECOPACK® (RoHS compliant)  
December 2007  
Rev 16  
1/52  
www.numonyx.com  
1

M25P80-VMW6P 替代型号

型号 品牌 替代类型 描述 数据表
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This tech note describes considerations in thermal applications for Micron memory devices,