Datasheet > LMBT3904

LMBT3904

更新时间： 2024-11-05 05:34:39

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
7页	142K
描述
三极管

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中文翻译

获取价格

数据手册

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LMBT3904 数据手册

GeneralPurposeTransistors

NPN Silicon

FEATURE

ƽSimplifies Circuit Design.

LMBT3904TT1G

We declare that the material of product compliance with

RoHS requirements.

ORDERING INFORMATION

Device

Marking

Shipping

LMBT3904TT1G

LMBT3904TT3G

3000/Tape&Reel

10000/Tape&Reel

MAXIMUM RATINGS

Rating

SC-89

Symbol

V _CEO

V _CBO

V _EBO

I _C

Value

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

COLLECTOR

Vdc

6.0

Vdc

Collector Current — Continuous

200

mAdc

BASE

THERMAL CHARACTERISTICS

Characteristic

EMITTER

Symbol

Max

Unit

Total Device Dissipation FR– 4 Board, (1)

T_A= 25°C

P_D

200

Derate above 25°C

1.6

600

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_θJA

P_D

FR-4 Board(2), T_A= 25°C

Derate above 25°C

2.4

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

400

T_J, T_stg

–55 to +150

DEVICE MARKING

LMBT3904TT1G = AM

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(3)

(I _C= 1.0 mAdc)

V _(BR)CEO

V _(BR)CBO

V _(BR)EBO

I _BL

6.0

—

Vdc

Collector–Base Breakdown Voltage

(I _C= 10 µAdc)

Emitter–Base Breakdown Voltage

(I _E= 10 µAdc)

Vdc

Base Cutoff Current

nAdc

( V _CE= 30 Vdc, V _EB= 3.0 Vdc, )

Collector Cutoff Current

I _CEX

—

( V _CE= 30Vdc, V _BE= 3.0Vdc )

1. FR-4 Minimum Pad.

2. FR-4 1.0 x 1.0 Inch Pad.

3. Pulse Test: Pulse Width

<300 µs, Duty Cycle <2.0%.

1/7

12 3 4 5 6 7

中文翻译

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