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LMBT3906TT1 PDF预览

LMBT3906TT1

更新时间: 2024-09-15 11:37:03
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
6页 145K
描述
General Purpose Transistors

LMBT3906TT1 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.8
最大集电极电流 (IC):0.2 A配置:Single
最小直流电流增益 (hFE):30最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):0.2 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):250 MHzBase Number Matches:1

LMBT3906TT1 数据手册

 浏览型号LMBT3906TT1的Datasheet PDF文件第2页浏览型号LMBT3906TT1的Datasheet PDF文件第3页浏览型号LMBT3906TT1的Datasheet PDF文件第4页浏览型号LMBT3906TT1的Datasheet PDF文件第5页浏览型号LMBT3906TT1的Datasheet PDF文件第6页 
LESHAN RADIO COMPANY, LTD.  
GeneralPurposeTransistors  
PNP Silicon  
LMBT3906TT1  
3
FEATURE  
ƽSimplifies Circuit Design.  
ƽThis is a Pb-Free Device.  
1
2
ORDERING INFORMATION  
Device  
Package  
SC-89  
Shipping  
SC-89  
LMBT3906TT1  
3000/Tape&Reel  
MAXIMUM RATINGS  
Rating  
Symbol  
V CEO  
V CBO  
V EBO  
I C  
Value  
– 40  
Unit  
3
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Vdc  
COLLECTOR  
– 40  
Vdc  
– 5.0  
– 200  
Vdc  
1
Collector Current — Continuous  
mAdc  
BASE  
2
THERMAL CHARACTERISTICS  
Characteristic  
EMITTER  
Symbol  
Max  
Unit  
Total Device Dissipation FR– 4 Board(1)  
P D  
200  
mW  
T
A =25 °C  
Derate above 25°C  
1.6  
mW/°C  
Thermal Resistance Junction to Ambient  
R θJA  
P D  
600  
300  
°C/W  
mW  
Total Device Dissipation  
FR-4 Board (2), T A = 25°C  
Derate above 25°C  
2.4  
400  
mW/°C  
°C/W  
°C  
Thermal Resistance Junction to Ambient  
Junction and Storage Temperature  
R θJA  
T J , T stg  
–55 to +150  
DEVICE MARKING  
LMBT3906TT1 = 2A  
ELECTRICAL CHARACTERISTICS (T A = 2C unless otherwise noted)  
Characteristic Symbol  
OFF CHARACTERISTICS  
Min  
Max  
Unit  
Collector–Emitter Breakdown Voltage (3)  
(I C = –1.0 mAdc, I B = 0)  
V (BR)CEO  
V (BR)CBO  
V (BR)EBO  
I BL  
Vdc  
Vdc  
– 40  
– 40  
– 5.0  
Collector–Base Breakdown Voltage  
(I C = –10 µAdc, I E = 0)  
Emitter–Base Breakdown Voltage  
(I E = –10 µAdc, I C = 0)  
Vdc  
Base Cutoff Current  
nAdc  
nAdc  
(V CE = –30 Vdc, V EB = –3.0 Vdc)  
Collector Cutoff Current  
– 50  
– 50  
I CEX  
(V CE = –30 Vdc, V EB = –3.0 Vdc)  
1. FR-4 Minimum Pad.  
2. FR-4 1.0 x 1.0 Inch Pad.  
3. Pulse Width 300 µs; Duty Cycle  
<
<2.0%.  
LMBT3906TT1-1/6  

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