5秒后页面跳转
LMBT3904WT1G PDF预览

LMBT3904WT1G

更新时间: 2024-11-05 11:37:03
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管光电二极管
页数 文件大小 规格书
11页 276K
描述
General Purpose Transistors

LMBT3904WT1G 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.74
Is Samacsys:N最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.15 W
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz最大关闭时间(toff):250 ns
最大开启时间(吨):70 nsBase Number Matches:1

LMBT3904WT1G 数据手册

 浏览型号LMBT3904WT1G的Datasheet PDF文件第2页浏览型号LMBT3904WT1G的Datasheet PDF文件第3页浏览型号LMBT3904WT1G的Datasheet PDF文件第4页浏览型号LMBT3904WT1G的Datasheet PDF文件第5页浏览型号LMBT3904WT1G的Datasheet PDF文件第6页浏览型号LMBT3904WT1G的Datasheet PDF文件第7页 
LESHAN RADIO COMPANY, LTD.  
GeneralPurposeTransistors  
NPN and PNP Silicon  
NPN  
LMBT3904WT1  
These transistors are designed for general purpose amplifier applications. They are housed  
in the SOT–323/SC–70 which is designed for low power surface mount applications.  
PNP  
LMBT3906WT1  
ƽ Pb-Free Package is available.  
GENERAL PURPOSE  
AMPLIFIER TRANSISTORS  
SURFACE MOUNT  
DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Package  
Shipping  
LMBT3904WT1  
AM  
SOT-323/SC-70  
3000/Tape&Reel  
AM  
(Pb-Free)  
LMBT3904WT1G  
LMBT3906WT1  
LMBT3906WT1G  
SOT-323/SC-70  
SOT-323/SC-70  
SOT-323/SC-70  
3000/Tape&Reel  
3000/Tape&Reel  
3000/Tape&Reel  
3
2A  
1
2A  
(Pb-Free)  
2
CASE 419–02, STYLE 3  
SOT– 323 / SC–70  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
LMBT3904WT1  
LMBT3906WT1  
LMBT3904WT1  
LMBT3906WT1  
LMBT3904WT1  
LMBT3906WT1  
V CEO  
40  
– 40  
60  
Vdc  
3
COLLECTOR  
V CBO  
V EBO  
I C  
Vdc  
Vdc  
1
– 40  
6.0  
BASE  
– 5.0  
200  
2
Collector Current — Continuous LMBT3904WT1  
mAdc  
EMITTER  
LMBT3906WT1  
– 200  
LMBT3904WT1  
THERMAL CHARACTERISTICS  
Characteristic  
3
COLLECTOR  
Symbol  
Max  
Unit  
Total Device Dissipation (1)  
T A =25 °C  
P D  
150  
mW  
1
BASE  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R θJA  
833  
°C/W  
°C  
2
T J , T stg  
–55 to +150  
EMITTER  
LMBT3906WT1  
LMBT3904/6WT1-1/11  

与LMBT3904WT1G相关器件

型号 品牌 获取价格 描述 数据表
LMBT3906DW1T1 LRC

获取价格

Dual Bias Resistor Transistor
LMBT3906DW1T1G LRC

获取价格

Dual Bias Resistor Transistor
LMBT3906LT1 LRC

获取价格

General Purpose Transistors
LMBT3906LT1G LRC

获取价格

General Purpose Transistors
LMBT3906TT1 LRC

获取价格

General Purpose Transistors
LMBT3906TT1G LRC

获取价格

General Purpose Transistors
LMBT3906WT1 LRC

获取价格

General Purpose Transistors
LMBT3906WT1G LRC

获取价格

General Purpose Transistors
LMBT3908LT1G LRC

获取价格

General Purpose Transistor
LMBT3908LT1G_15 LRC

获取价格

General Purpose Transistor