Datasheet > LMBT3946DW1T1

LMBT3946DW1T1

更新时间： 2024-09-16 11:37:03

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
11页	215K
描述
Dual General Purpose Transistors

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技术参数
数据手册

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LMBT3946DW1T1 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.79
Is Samacsys：	N	最大集电极电流 (IC)：	0.2 A
最小直流电流增益 (hFE)：	30	最高工作温度：	150 °C
极性/信道类型：	NPN/PNP	最大功率耗散 (Abs)：	0.15 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
标称过渡频率 (fT)：	250 MHz	Base Number Matches：	1

LMBT3946DW1T1 数据手册

LESHAN RADIO COMPANY, LTD.

Dual General Purpose

Transistors

The LMBT3946DW1T1 device is a spin–off of our popular

SOT–23/SOT–323 three–leaded device. It is designed for general

purpose amplifier applications and is housed in the SOT–363

LMBT3946DW1T1

six–leaded surface mount package. By putting two discrete devices in

one package, this device is ideal for low–power surface mount

applications where board space is at a premium.

• h_FE, 100–300

• Low V_CE(sat), < 0.4 V

• Simplifies Circuit Design

SOT 363/SC-88

• Reduces Board Space

• Reduces Component Count

•Available in 8 mm, 7–inch/3,000 Unit Tape and Reel

• Device Marking: LMBT3946DW1T1 = 46

MAXIMUM RATINGS

Q₁

Rating

Collector-Emitter Voltage

(NPN)

Symbol

Value

Unit

Q₂

V _CEO

Vdc

(PNP)

-40

Collector-Base Voltage

(NPN)

V _CBO

V _EBO

I _C

Vdc

mAdc

LMBT3946DW1T1*

*Q1 PNP

Q2 NPN

(PNP)

-40

Emitter-Base Voltage

(NPN)

6.0

ORDERING INFORMATION

(PNP)

-5.0

Device

Package

Shipping

LMBT3946DW1T1 SOT-363 3000Units/Reel

Collector Current-Continuous

(NPN)

200

(PNP)

-200

Electrostatic Discharge

E_SDHBM>16000,

MM>2000

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Package Dissipation⁽¹⁾

P_D

150

T _A= 25°C

Thermal Resistance Junction

to Ambient

R_θJA

833

°C/W

Junction and Storage

Temperature Range

T_J,T_stg–55 to +150 °C

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum

1. recommended footprint.

LMBT3946DW1T1 1/11

12 3 4 5 6 7...11

中文翻译

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