Datasheet > LMBT4401LT1G

LMBT4401LT1G

更新时间： 2024-11-06 11:37:03

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
6页	271K
描述
General Purpose Transistor

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中文翻译

获取价格

数据手册

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LMBT4401LT1G 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistor

• Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

LMBT4401LT1

ORDERING INFORMATION

Device

Package

Shipping

LMBT4401LT1

SOT–23

3000/Tape & Reel

LMBT4401LT1G SOT–23

MAXIMUM RATINGS

SOT–23

Rating

Symbol

Value

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

V _CEO

V _CBO

V _EBO

I _C

Vdc

6.0

Vdc

COLLECTOR

600

mAdc

BASE

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

EMITTER

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P_D

225

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_θJA

P_D

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

2.4

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

417

T_J, T_stg

–55 to +150

DEVICE MARKING

LMBT4401LT1 = 2X

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (3)

(I _C= 1.0 mAdc, I _B= 0)

V _(BR)CEO

V _(BR)CBO

V _(BR)EBO

I _BEV

Vdc

6.0

—

Collector–Base Breakdown Voltage

(I _C= 0.1 mAdc, I _E= 0)

Emitter–Base Breakdown Voltage

(I _E= 0.1 mAdc, I _C= 0)

Vdc

—

Base Cutoff Current

µAdc

(V _CE= 35 Vdc, V _EB= 0.4 Vdc)

Collector Cutoff Current

0.1

I _CEX

(V _CE= 35 Vdc, V _EB= 0.4 Vdc)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

—

3. Pulse Test: Pulse Width

<300 µs; Duty Cycle <2.0%.

LMBT4401LT1–1/6

12 3 4 5 6

中文翻译

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