Datasheet > LMBT3906DW1T1G

LMBT3906DW1T1G

更新时间： 2024-09-15 03:51:39

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
8页	424K
描述
Dual Bias Resistor Transistor

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技术参数
数据手册

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LMBT3906DW1T1G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.69
Is Samacsys：	N	最大集电极电流 (IC)：	0.2 A
最小直流电流增益 (hFE)：	100	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.15 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	250 MHz	Base Number Matches：	1

LMBT3906DW1T1G 数据手册

LESHAN RADIO COMPANY, LTD.

Dual Bias Resistor

Transistor

LMBT3906DW1T1G

The LMBT3906DW1T1 device isa spin–off of our popular

SOT–23/SOT–323 three–leaded device. It is designed for general

purpose amplifier applications and is housed in the SOT–363

six–leaded surface mount package. By putting two discrete devices in

one package, this device is ideal for low–power surface mount

applications where board space is at a premium.

SOT-363

(3)

(2)

(1)

• h , 100–300

• Low V

, ≤ 0.4 V

CE(sat)

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7–inch/3,000 Unit Tape and Reel

• Device Marking: LMBT3906DW1T1G = A2

(4)

(5)

(6)

Featrues

z We declare that the material of product compliance with RoHS requirements.

MAXIMUM RATINGS

ORDERING INFORMATION

Rating

Symbol

V_CEO

V_CBO

V_EBO

I_C

Value

–40

Unit

Vdc

mAdc

Device

Marking

Shipping

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current – Continuous

Electrostatic Discharge

LMBT3906DW1T1G

3000 Units/Reel

10000 Units/Reel

–40

–5.0

–200

ESD

HBM>16000,

MM>2000

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

(1)

Total Package Dissipation

P_D

150

= 25°C

Thermal Resistance Junction to

Ambient

R_qJA

833

°C/W

°C

Junction and Storage

Temperature Range

T_J, T

–55 to +150

stg

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum

1. recommended footprint.

1/9

12 3 4 5 6 7 8

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