Datasheet > LMBT3904TT1G

LMBT3904TT1G

更新时间： 2024-09-15 05:42:23

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
7页	143K
描述
General Purpose Transistors

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中文翻译

获取价格

技术参数
数据手册

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LMBT3904TT1G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.67
Base Number Matches：	1

LMBT3904TT1G 数据手册

LESHAN RADIO COMPANY, LTD.

GeneralPurposeTransistors

NPN Silicon

FEATURE

ƽSimplifies Circuit Design.

LMBT3904TT1G

We declare that the material of product compliance with

RoHS requirements.

ORDERING INFORMATION

Device

Marking

Shipping

LMBT3904TT1G

LMBT3904TT3G

3000/Tape&Reel

10000/Tape&Reel

MAXIMUM RATINGS

Rating

SC-89

Symbol

V _CEO

V _CBO

V _EBO

I _C

Value

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

COLLECTOR

Vdc

6.0

Vdc

Collector Current — Continuous

200

mAdc

BASE

THERMAL CHARACTERISTICS

Characteristic

EMITTER

Symbol

Max

Unit

Total Device Dissipation FR– 4 Board, (1)

T_A= 25°C

P_D

200

Derate above 25°C

1.6

600

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_θJA

P_D

FR-4 Board(2), T_A= 25°C

Derate above 25°C

2.4

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

400

T_J, T_stg

–55 to +150

°C

DEVICE MARKING

LMBT3904TT1G = AM

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(3)

(I _C= 1.0 mAdc)

V _(BR)CEO

V _(BR)CBO

V _(BR)EBO

I _BL

6.0

—

Vdc

Collector–Base Breakdown Voltage

(I _C= 10 µAdc)

Emitter–Base Breakdown Voltage

(I _E= 10 µAdc)

Vdc

Base Cutoff Current

nAdc

( V _CE= 30 Vdc, V _EB= 3.0 Vdc, )

Collector Cutoff Current

I _CEX

—

( V _CE= 30Vdc, V _BE= 3.0Vdc )

1. FR-4 Minimum Pad.

2. FR-4 1.0 x 1.0 Inch Pad.

3. Pulse Test: Pulse Width

<300 µs, Duty Cycle <2.0%.

1/7

12 3 4 5 6 7

中文翻译

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