Datasheet > KTD1028_08

KTD1028_08

更新时间： 2024-11-18 11:32:19

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
2页	311K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

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中文翻译

获取价格

数据手册

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KTD1028_08 数据手册

SEMICONDUCTOR

KTD1028

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

HIGH CURRENT APPLICATION.

FEATURES

High DC Current Gain

: h_FE=800 3200 (V_CE=5.0V, I_C=300mA).

Wide Area of Safe Operation.

Low Collector Saturation Voltage.

: V_CE(sat)=0.17V (I_C=500mA, I_B=5.0mA).

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

1.0

I_B

Base Current

200

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

-55 150

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX.

100

3200

UNIT

V_CB=60V, I_E=0

I_EBO

V_EB=8V, I_C=0

Emitter Cut-off Current

800

400

h_FE(1) (Note)

h_FE(2)

V_CE(sat)

V_BE(sat)

C_ob

V_CE=5.0V, I_C=300mA

V_CE=5.0V, I_C=1.0A

I_C=500mA, I_B=5.0mA

V_CB=10V, I_E=0, f=1.0MHz

V_CE=10V, I_C=500mA

V_CE=5V, I_C=100mA

1500

DC Current Gain

Collector-Emitter Saturration Voltage

Base-Emitter Saturation Voltage

Collector Output Capacitance

Transition Frequency

0.17

0.80

0.30

1.2

f_T

150

250

630

MHz

V_BE

Base-Emitter Voltage

700

Note: h_FEClassification

A:800 1600, B:1200 2400, C:2000 3200

2008. 3. 11

Revision No : 3

1/2

中文翻译

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