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KTD1351

更新时间: 2024-02-15 17:43:45
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 126K
描述
TRANSISTOR (NPN)

KTD1351 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Is Samacsys:N最大集电极电流 (IC):3 A
配置:Single最小直流电流增益 (hFE):60
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):2 W子类别:Other Transistors
表面贴装:NO标称过渡频率 (fT):2 MHz
Base Number Matches:1

KTD1351 数据手册

  
RoHS  
KTD1351  
KTD1351 TRANSISTOR (NPN)  
TO-220  
FEATURES  
1. BASE  
Power dissipation  
2. COLLECTOR  
3. EMITTER  
PCM:  
2
W (Tamb=25)  
Collector current  
ICM:  
3
A
V
1 2 3  
Collector-base voltage  
V(BR)CBO  
:
60  
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic= 100 µA,IE=0  
Ic= 50mA, IB=0  
IE= 100 µA , IC=0  
VCB= 60V, IE=0  
VEB= 7V, IC=0  
MIN  
60  
60  
7
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
100  
100  
µA  
µA  
IEBO  
Emitter cut-off current  
hFE  
VCE= 5V, IC= 0.5 A  
60  
300  
DC current gain  
VCE(sat)  
VBE  
VCE=2A, IB=0.2A  
VCE= 5V, IC=0.5A  
VCE=5V, IC=0.5A  
1
1
V
V
Collector-emitter saturation voltage  
Base-emitter voltage  
fT  
2
MHZ  
Transition frequency  
CLASSIFICATION OF hFE  
(1)  
Rank  
O
Y
GR  
WEJ ELECTRONIC CO.,LTD  
60-120  
100-200  
150-300  
Range  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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