Datasheet > KTD1304

KTD1304

更新时间： 2024-11-22 18:09:35

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	471K
描述
SOT-23

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中文翻译

获取价格

数据手册

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KTD1304 数据手册

KTD1304

BIPOLAR TRANSISTOR (NPN)

FEATURES

 High Emitter-base voltage

 Low on resistance

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

300

°C/W

°C

200

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

625

150

Storage Temperature

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=100uA，I_E=0

I_C=1mA，I_B=0

V(BR)CEO

V(BR)EBO

I_CBO

I_E=100uA，I_C=0

V_CB=60V, I_E=0

0.1

Emitter cut-off current

V_EB=5V, I_C=0

I_EBO

h_FE1

200

1000

V_CE=2V, I_C=4mA

I_C=100mA，I_B=10mA

DC current gain

h_FE2

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

0.25

V_CE=10V,I_C=1mA, f=100

MHz

V_CE=10V, I_E=0, f=1

MHz

Collector output capacitance

C_ob

V_IN=0.3V, I_B=1mA, f=1K

On resistance

R_(ON)

0.6

CLASSIFICATION OF h_FE

Rank

Range

200-1000

MAX

Marking

1 / 4

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E-mail:hkt@heketai.com

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