Datasheet > KTD1302

KTD1302

更新时间： 2024-11-19 18:09:39

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	455K
描述
SOT-89

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中文翻译

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数据手册

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KTD1302 数据手册

KTD1302

BIPOLAR TRANSISTOR (NPN)

FEATURES

 Audio Muting Application

 High Emitter-Base Voltage

 Surface Mount device

SOT-89

MECHANICAL DATA



Case: SOT-89

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.055 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

300

°C/W

°C

Collector Power Dissipation

500

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

250

150

Storage Temperature

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

V(BR)CBO

V(BR)CEO

V(BR)EBO

I_CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=100uA，I_E=0

I_C=1mA，I_B=0

I =100uA I =0

，

0.1

800

V_CB=25V, I_E=0

Emitter cut-off current

V_EB=12V, I_C=0

I_EBO

h_FE1(FOR)200

V_CE=2V, I_C=4mA

I_C=100mA，I_B=10mA

DC current gain

h_FE2(REV)

V_CE(sat)

V_BE(sat)

f_T

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

0.25

V_CE=10V,I_C=1mA,f=100

MHz

V_CE=10V, I_E=0, f=1

Collector output capacitance

C_ob

MHz

MARKING: 1302

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©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD

E-mail:hkt@heketai.com

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