Datasheet > KTD1302

KTD1302

更新时间： 2023-12-06 20:10:27

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	1231K
描述
SOT-89-3L

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中文翻译

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数据手册

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KTD1302 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

KTD1302

TRANSISTOR (NPN)

1. BASE

FEATURES

2. COLLECTOR

Small Flat Package

Audio Muting Application

High Emitter-Base Voltage

3. EMITTER

MARKING

1302

Solid dot = Green molding compound device.

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

300

℃/W

℃

P_C

Collector Power Dissipation

500

R_θJA

T_J,T_stg

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

250

-55~+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=0.1mA,I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=1mA,I_B=0

I_E=0.1mA,I_C=0

V_CB=25V,I_E=0

100

800

Emitter cut-off current

I_EBO

V_EB=12V,I_C=0

h_{FE(1) (FOR)}

h_FE(2)(REV)

V_CE(sat)

V_BE(sat)

C_ob

V_CE=2V, I_C=4mA

I_C=100mA,I_B=10mA

V_CB=10V,I_E=0, f=1MHz

V^CE=10V,I^C=1mA,

f=100MHz

200

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

0.25

f_T

MHz

Transition frequency

www.jscj-elec.com

Rev. - 2.2

12 3

中文翻译

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