Datasheet > KTD1302

KTD1302

更新时间： 2024-11-22 18:09:19

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描述
NPN Transistor

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中文翻译

获取价格

数据手册

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KTD1302 数据手册

SMD Type

Transistors

NPN Transistors

KTD1302

1.70 0.1

■ Features

● Small Flat Package

● Audio Muting Application

● High Emitter-Base Voltage

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

300

500

250

150

℃/W

RθJA

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 μA， I

Ic= 1 mA， I = 0

= 100μA， I

E= 0

C= 0

CBO

EBO

CB= 25 V , I

EB= 12V , I

= 0

0.1

0.25

C=0

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=100 mA, I

B=10mA

=100 mA, I

B=10mA

CE= 2V, I

= 4mA

(FOR)

(REV)

200

800

DC current gain

hFE

Collector output capacitance

Transition frequency

Cob

CB= 10V, I

^CE= 10V, I

E= 0,f=1MHz

C= 1mA , f=100MHz

MHz

■ Marking

Marking

1302

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