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KTC4376 PDF预览

KTC4376

更新时间: 2024-11-19 02:59:11
品牌 Logo 应用领域
永而佳 - WINNERJOIN /
页数 文件大小 规格书
1页 138K
描述
TRANSISTOR (NPN)

KTC4376 数据手册

  
RoHS  
KTC4376  
SOT-89  
1. BASE  
KTC4376 TRANSISTOR (NPN)  
FEATURES  
Power dissipation  
2. COLLECTOR  
3. EMITTER  
1
PCM:  
500  
mW (Tamb=25)  
2
3
Collector current  
ICM:  
800  
35  
mA  
V
Collector-base voltage  
V(BR)CBO  
:
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=1mA, IE=0  
MIN  
35  
30  
5
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
Ic=10mA, IB=0  
IE=1mA, IC=0  
V
µA  
µA  
VCB=35V, IE=0  
0.1  
0.1  
320  
IEBO  
Emitter cut-off current  
VEB=5V, IC=0  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE  
V
CE=1V, IC=100mA  
CE=1V, IC=700mA  
100  
35  
DC current gain  
V
V
V
Collector-emitter saturation voltage  
Base-emitter voltage  
IC=500mA, IB=20mA  
CE=1V, IC=10mA  
0.5  
0.8  
V
MHz  
pF  
Transition frequency  
fT  
VCE=5V, IC=10mA  
120  
13  
Cob  
Collector output capacitance  
V
CB=10V, IE=0, f=1MHz  
CLASSIFICATION OF hFE(1)  
Rank  
O
Y
WEJ ELECTRONIC CO.,LTD  
Range  
100-200  
160-320  
Marking  
PO  
PY  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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