Datasheet > KTC4376O

KTC4376O

更新时间： 2024-11-18 19:47:15

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体管
页数	文件大小	规格书
1页	123K
描述
Transistor

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中文翻译

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技术参数
数据手册

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KTC4376O 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

KTC4376O 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

KTC4376

TRANSISTOR (NPN)

1. BASE

FEATURES

2. COLLECTOR

Small Flat Package

High Current Application

Complementary to KTA1664

3. EMITTER

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

800

℃/W

℃

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

500

R_θJA

T_j

250

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=1mA,I_E=0

I_C=10mA,I_B=0

I_E=1mA,I_C=0

V_CB=35V,I_E=0

100

320

Emitter cut-off current

I_EBO

V_EB=5V,I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=1V, I_C=100mA

V_CE=1V, I_C=700mA

I_C=500mA,I_B=20mA

V_CE=1V, I_C=10mA

V_CB=10V,I_E=0, f=1MHz

VCE=5V,IC=10mA

100

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

0.5

0.8

0.5

Collector output capacitance

Transition frequency

C_ob

f_T

120

MHz

CLASSIFICATION OF h_FE(1)

160–320

RANK

RANGE

100–200

MARKING

A,Nov,2010

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