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KTC4376Y PDF预览

KTC4376Y

更新时间: 2024-11-21 19:47:15
品牌 Logo 应用领域
江苏长电/长晶 - CJ 晶体管
页数 文件大小 规格书
1页 123K
描述
Transistor

KTC4376Y 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

KTC4376Y 数据手册

  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
SOT-89-3L Plastic-Encapsulate Transistors  
SOT-89-3L  
KTC4376  
TRANSISTOR (NPN)  
1. BASE  
FEATURES  
2. COLLECTOR  
z
z
z
Small Flat Package  
High Current Application  
Complementary to KTA1664  
3. EMITTER  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Value  
35  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
30  
V
5
V
Collector Current  
800  
mA  
mW  
/W  
PC  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
500  
RθJA  
Tj  
250  
150  
Tstg  
Storage Temperature  
-55~+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
Min  
35  
30  
5
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC=1mA,IE=0  
IC=10mA,IB=0  
V
IE=1mA,IC=0  
V
VCB=35V,IE=0  
100  
100  
320  
nA  
nA  
Emitter cut-off current  
IEBO  
VEB=5V,IC=0  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE  
VCE=1V, IC=100mA  
VCE=1V, IC=700mA  
IC=500mA,IB=20mA  
VCE=1V, IC=10mA  
VCB=10V,IE=0, f=1MHz  
VCE=5V,IC=10mA  
100  
35  
DC current gain  
Collector-emitter saturation voltage  
Base-emitter voltage  
0.5  
0.8  
V
V
0.5  
13  
pF  
Collector output capacitance  
Transition frequency  
Cob  
fT  
120  
MHz  
CLASSIFICATION OF hFE(1)  
O
Y
160320  
PY  
RANK  
RANGE  
100200  
PO  
MARKING  
A,Nov,2010  

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