SEMICONDUCTOR
KTC4377
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
STROBO FLASH APPLICATION.
HIGH CURRENT APPLICATION.
A
H
C
FEATURES
High DC Current Gain and Excellent hFE Linearity
: hFE(1)=140 600(VCE=1V, IC=0.5A)
: hFE(2)=70(Min.), 140(Typ.) (VCE=1V, IC=2A).
Low Saturation Voltage
G
DIM MILLIMETERS
A
B
C
D
E
F
4.70 MAX
_
D
+
2.50 0.20
D
: VCE(sat)=0.5V(Max.) (IC=2A, IB=50mA).
Small Flat Package.
1.70 MAX
K
0.45+0.15/-0.10
F
F
4.25 MAX
_
1W (Mounted on Ceramic Substrate).
+
1.50 0.10
G
H
J
0.40 TYP
1.75 MAX
1
2
3
0.75 MIN
K
0.5+0.10/-0.05
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
RATING
UNIT
V
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
30
30
V
V
A
10
SOT-89
6
DC
2
4
Collector Current
ICP
Pulse (Note 1)
DC
IB
0.4
Base Current
A
IBP
Pulse (Note 1)
0.8
Marking
PC
500
1
mW
W
h
Rank
Lot No.
Collector Power Dissipation
FE
PC*
Tj
Junction Temperature
150
-55 150
Type Name
Tstg
Storage Temperature Range
Note 1 : Pulse Width 10mS, Duty Cycle 30%
PC* : KTC4377 mounted on ceramic substrate (250mm2x0.8t)
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
SYMBOL
ICBO
TEST CONDITION
VCB=30V, IE=0
MIN.
TYP.
MAX. UNIT
Collector Cut-off Current
-
-
-
-
100
100
-
nA
nA
V
IEBO
VEB=6V, IC=0
IC=10mA, IB=0
IE=1mA, IC=0
Emitter Cut-off Current
V(BR)CEO
V(BR)EBO
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
10
6
-
-
-
V
hFE(1) (Note1) VCE=1V, IC=0.5A
140
70
-
-
600
-
DC Current Gain
hFE(2)
VCE(sat)
VBE
VCE=1V, IC=2A
140
0.2
0.86
150
27
IC=2A, IB=50mA
VCE=1V, IC=2A
Collector-Emitter Saturation-Voltage
Base-Emitter Voltage
0.5
1.5
-
V
V
-
fT
VCE=1V, IC=0.5A
VCB=10V, IE=0, f=1MHz
Transition Frequency
-
MHz
pF
Cob
Collector Output Capacitance
-
-
Note : hFE(1) Classification
2003. 9. 16
A:140~240, B:200~330, C:300~450, D:420~600
Revision No : 4
1/2