Datasheet > KTC4377

KTC4377

更新时间： 2023-12-06 20:11:47

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1693K
描述
SOT-89-3L

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中文翻译

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数据手册

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KTC4377 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

KTC4377 TRANSISTOR (NPN)

SOT-89-3L

1. BASE

FEATURES

Low voltage

MARKING

2. COLLECTOR

3. EMITTER

140-240

200-330

300-450

420-600

Solid dot = Green molding compound device.

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

P_C

0.5

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=1mA,I_E=0

V_(BR)CEOI_C=10mA,I_B=0

V_(BR)EBOI_E=1mA,I_C=0

I_CBO

I_EBO

V_CB=30V,I_E=0

0.1

μA

Emitter cut-off current

V_EB=6V,I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=1V,I_C=0.5A

V_CE=1V,I_C=2A

140

600

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

I_C=2A,I_B=50mA

V_CE=1V,I_C=2A

0.5

1.5

Transition frequency

f_T

V_CE=1V,I_C=0.5A

V_CB=10V,I_E=0,f=1MHz

150

MHz

Collector output capacitance

CLASSIFICATION OF h_FE(1)

C_ob

Rank

200-330

Range

140-240

300-450

420-600

www.jscj-elec.com

Rev. - 2.2

12 3 4

中文翻译

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