Datasheet > KTC4377

KTC4377

更新时间： 2024-11-19 18:09:43

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科信 - KEXIN		/
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1页	48K
描述
NPN Transistor

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中文翻译

获取价格

数据手册

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KTC4377 数据手册

SMD Type

Transistors

Epitaxial Planar NPN Transistor

KTC4377

Unit:mm

SOT-89

1.50 ±0.1

4.50±0.1

1.80±0.1

■ Features

● Collector Power Dissipation: PC=500mW

● Collector Current: IC=2A

0.44±0.1

0.48±0.1

0.53±0.1

3.00±0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-base voltage

Collector-Emitter voltage

Emitter-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

Collector Current

Collector Power Dissipation

Junction Temperature

500

℃

150

Storage Temperature Range

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test conditons

IC= 1mA, IE=0

Min

Typ Max

Unit

Collector-base breakdown voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IC=10mA, IB=0

IE=1mA, IC=0

VCB=30V, IE=0

VEB=6V, IC=0

100

Emitter Cut-off Current

IEBO

VCE=1V, IC=500mA

VCE=1V, IC=2A

140

600

DC Current Gain

hFE

140

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

VCE(sat)

VBE

IC=2A, IB=50mA

0.5

VCE=1V, IC=2A

1.5

Transition frequency

VCE=1V, IC=500mA

VCB=10V, IE=0, f=1MHz

150

MHz

Collector Output Capacitance

Cob

■ hFE Classification

Marking

Rank

hFE

140～240

200～330

300～450

420～600

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