Datasheet > KTC4376-O

KTC4376-O

更新时间： 2024-11-19 01:04:51

品牌	Logo	应用领域
科信 - KEXIN		晶体管
页数	文件大小	规格书
2页	1133K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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KTC4376-O 数据手册

SMD Type

Transistors

NPN Transistors

KTC4376

1.70 0.1

■ Features

● 1W (Mounted on Ceramic Substrate)

● Small Flat Package

● Complementary to KTA1664

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Base Current

Symbol

Rating

Unit

VCBO

VCEO

VEBO

800

160

500

Collector Power Dissipation

Junction Temperature

150

-55 to 150

℃

Storage Temperature Range

Tstg

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100uA， I

Ic= 10 mA，I

= 100uA， I

CB= 35V , I = 0

^EB= 5V , I =0

= 0

CBO

EBO

0.1

0.5

1.2

0.8

320

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=500mA, I

=20mA

=500mA, I

^CE= 1V, I

CE= 1V, I

=10mA

0.5

100

=100mA

=700mA

DC current gain

hFE

Collector output capacitance

Transition frequency

CB= 10V,I

^CE= 5V, I

=0,f=1MHz

= 10mA

120

MHz

■ Classification of hfe(1)

Type

Range

Marking

KTC4376-O

100-200

KTC4376-Y

160-320

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