Datasheet > KTC4378

KTC4378

更新时间： 2024-09-30 14:53:59

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1585K
描述
SOT-89-3L

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中文翻译

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数据手册

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KTC4378 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

KTC4378 TRANSISTOR (NPN)

1. BASE

FEATURES

High voltage

2. COLLECTOR

3. EMITTER

MARKING

TGR

Solid dot = Green molding

compound device.

100-200

160-320

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

Parameter

Value

Unit

Collector-Base Voltage

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

P_C

0.5

Operation Junction and

Storage Temperature Range

T_J,T_stg

℃

-55~150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=1mA,I_E=0

V_(BR)CEOI_C=10mA,I_B=0

V_(BR)EBOI_E=1mA,I_C=0

I_CBO

I_EBO

V_CB=50V,I_E=0

0.1

μA

Emitter cut-off current

V_EB=4V,I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

V_CE=2V,I_C=0.05A

V_CE=2V,I_C=1A

100

320

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_C=500mA,I_B=50mA

V_CE=10V,I_C=50mA

V_CB=10V,I_E=0,f=1MHz

0.5

1.2

150

MHz

Collector output capacitance

CLASSIFICATION OF h_FE(1)

Rank

C_ob

160-320

100-200

Range

www.jscj-elec.com

Rev. - 2.3

12 3 4

中文翻译

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