Datasheet > KTC4373_98

KTC4373_98

更新时间： 2024-02-11 21:09:50

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
2页	327K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

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中文翻译

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数据手册

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KTC4373_98 数据手册

SEMICONDUCTOR

KTC4373

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

HIGH VOLTAGE APPLICATION.

FEATURES

High Voltage : V_CEO=120V.

High Transition Frequency : f_T=120MHz(Typ.).

1W(Monunted on Ceramic Substrate).

Small Flat Package.

DIM MILLIMETERS

Complementary to KTA1661.

4.70 MAX

2.50 0.20

1.70 MAX

0.45+0.15/-0.10

4.25 MAX

1.50 0.10

0.40 TYP

1.75 MAX

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

)

0.75 MIN

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

120

UNIT

0.5+0.10/-0.05

1. BASE

120

2. COLLECTOR (HEAT SINK)

3. EMITTER

800

I_B

Base Current

160

SOT-89

P_C

500

Collector Power Dissipation

P_C*

T_j

Junction Temperature

150

T_stg

Storage Temperature Range

-55 150

P_C* : KTC4373 mounted on ceramic substrate (250mm²x0.8t)

Marking

Rank

Lot No.

Type Name

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX.

100

UNIT

V_CB=120V, I_E=0

I_EBO

V_EB=5V, I_C=0

V_(BR)CEO

V_(BR)EBO

h_FE(Note)

V_CE(sat)

V_BE

I_C=10mA, I_B=0

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

120

5.0

I_E=1mA, I_C=0

V_CE=5V, I_C=100mA

I_C=500mA, I_B=50mA

V_CE=5V, I_C=500mA

V_CE=5V, I_C=100mA

V_CB=10V, I_E=0, f=1MHz

240

1.0

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

f_T

Transition Frequency

120

MHz

C_ob

Collector Output Capacitance

Note : h_FEClassification O:80 160, Y:120 240

1998. 6. 15

Revision No : 2

1/2

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与KTC4373_98相关器件

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KTC4373-O	KEXIN	获取价格	NPN Transistors
KTC4373O-TP	MCC	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C
KTC4373-O-TP-HF	MCC	获取价格	Transistor,
KTC4373Y	CJ	获取价格	Transistor
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