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Product specification
KTC4376
Unit:mm
SOT-89
1.50 ±0.1
4.50±0.1
1.80±0.1
■ Features
● Collector Power Dissipation: PC=500mW
● Collector Current: IC=800mA
3
1
2
0.44±0.1
0.48±0.1
0.53±0.1
3.00±0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-Emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
35
30
V
5
V
Collector Current
800
mA
mW
℃
Collector Power Dissipation
Junction Temperature
PC
500
Tj
150
Storage Temperature Range
Tstg
-55 to 150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditons
IC= 1mA, IE=0
Min
Typ Max
Unit
V
Collector-base breakdown voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
V(BR)CBO
35
30
5
V(BR)CEO
V(BR)EBO
ICBO
IC=10mA, IB=0
IE=1mA, IC=0
VCB=35V, IE=0
VEB=5V, IC=0
V
V
100
100
320
nA
nA
Emitter Cut-off Current
IEBO
VCE=1V, IC=100mA
VCE=1V, IC=700mA
IC=500mA, IB=20mA
VCE=1V, IC=10mA
VCE=5V, IC=10mA
VCB=10V, IE=0, f=1MHz
100
35
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
VCE(sat)
VBE
fT
0.5
V
V
0.8
120
Transition frequency
MHz
pF
Collector Output Capacitance
Cob
13
■ hFE Classification
Marking
Rank
PO
O
PY
Y
Range
100~200
160~320
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