Datasheet > KTC4375

KTC4375

更新时间： 2024-09-27 12:32:43

品牌	Logo	应用领域
TYSEMI		晶体晶体管 PC
页数	文件大小	规格书
1页	179K
描述
Collector Power Dissipation: PC=500mW

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中文翻译

获取价格

数据手册

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KTC4375 数据手册

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Product specification

KTC4375

Unit:mm

SOT-89

1.50 ±0.1

4.50±0.1

1.80±0.1

■ Features

● Collector Power Dissipation: PC=500mW

● Collector Current: IC=1.5A

0.44±0.1

0.48±0.1

0.53±0.1

3.00±0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-base voltage

Collector-Emitter voltage

Emitter-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

1.5

Collector Current

500

℃

Collector Power Dissipation

PC *

Junction Temperature

150

Storage Temperature Range

Tstg

-55 to 150

* : KTC4375 mounted on ceramic substrate (250mm²x0.8t)

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

Testconditons

IC= 1mA, IE=0

Min

Typ Max

Unit

Collector-base breakdown voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

IC=10mA, IB=0

IE=1mA, IC=0

VCB=30V, IE=0

100

Emitter Cut-off Current

IEBO

VEB=5V, IC=0

DC Current Gain

hFE

VCE=2V, IC=500mA

IC=1.5A, IB=0.03A

VCE=2V, IC=500mA

VCB=10V, IE=0, f=1MHz

100

320

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

VCE(sat)

VBE

2.0

1.0

Transition frequency

120

MHz

Collector Output Capacitance

Cob

■ hFE Classification

Marking

Rank

hFE

100～200

160～320

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中文翻译

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