Datasheet > KTC4373Y

KTC4373Y

更新时间： 2024-11-19 06:27:47

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	123K
描述
Transistor

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中文翻译

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数据手册

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KTC4373Y 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

KTC4373

TRANSISTOR (NPN)

1. BASE

FEATURES

2. COLLECTOR

Small Flat Package

High Voltage Application

3. EMITTER

High Voltage

High Transition Frequency

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

120

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

120

Collector Current

800

℃/W

℃

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

500

R_θJA

T_j

250

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

120

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 1mA,I_E=0

I_C=10mA,I_B=0

I_E=1mA,I_C=0

V_CB=120V,I_E=0

100

240

Emitter cut-off current

I_EBO

V_EB=5V,I_C=0

DC current gain

h_FE

V_CE=5V, I_C=100mA

I_C=500mA,I_B=50mA

V_CE=5V, I_C=500mA

V_CB=10V,I_E=0, f=1MHz

VCE=5V,IC= 500mA

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

Collector output capacitance

Transition frequency

C_ob

f_T

120

MHz

CLASSIFICATION OF h_FE

RANK

RANGE

80–160

120–240

MARKING

A,Nov,2010

中文翻译

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