Datasheet > KTC4374

KTC4374

更新时间： 2024-11-19 14:55:27

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	1379K
描述
SOT-89-3L

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中文翻译

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数据手册

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KTC4374 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

KTC4374

TRANSISTOR (NPN)

1. BASE

FEATURES

2. COLLECTOR

Small Flat Package

General Purpose Application

3. EMITTER

MARKING

70–140

120–240

Solid dot = Green molding compound device.

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

400

℃/W

℃

P_C

Collector Power Dissipation

500

R_θJA

T_J,T_stg

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

250

-55~+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C= 1mA,I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=10mA,I_B=0

I_E=1mA,I_C=0

V_CB=80V,I_E=0

100

240

Emitter cut-off current

I_EBO

V_EB=5V,I_C=0

V_CE=2V, I_C=50mA

V_CE=2V, I_C=200mA

I_C=200mA,I_B=20mA

V_CE=2V, I_C=5mA

V_CB=10V,I_E=0, f=1MHz

VCE=10V,IC= 10mA

DC current gain

h_FE

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

C_ob

0.4

0.8

0.55

Collector output capacitance

Transition frequency

f_T

100

MHz

CLASSIFICATION OF h_FE

120–240

RANK

RANGE

70–140

MARKING

www.jscj-elec.com

Rev. - 2.2

12 3

中文翻译

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