Datasheet > KTC4375

KTC4375

更新时间： 2024-11-19 02:55:39

品牌	Logo	应用领域
科信 - KEXIN		晶体管
页数	文件大小	规格书
2页	1160K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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KTC4375 数据手册

SMD Type

Transistors

NPN Transistors

KTC4375

1.70 0.1

■ Features

● Low voltage

● Comlementary to KTA1663

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

1.5

500

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 1 mA， I

Ic= 10 mA， I

= 1 mA， I

CB= 30 V , I

EB= 5V , I =0

E= 0

B= 0

C= 0

CBO

EBO

E= 0

100

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=1.5 A, I

B=30mA

=1.5 A, I

B=30mA

1.2

CE= 2V, I

= 500mA

DC current gain

hFE

C= 500mA

100

320

Collector output capacitance

Transition frequency

CB= 10V, I

E= 0,f=1MHz

^CE= 2V, I = 500mA

120

MHz

■ Classification of hfe

Type

Range

Marking

KTC4375-O

100-200

KTC4375-Y

160-320

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