5秒后页面跳转
KTC4075-GR-TP PDF预览

KTC4075-GR-TP

更新时间: 2024-11-21 03:26:59
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
4页 366K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3

KTC4075-GR-TP 数据手册

 浏览型号KTC4075-GR-TP的Datasheet PDF文件第2页浏览型号KTC4075-GR-TP的Datasheet PDF文件第3页浏览型号KTC4075-GR-TP的Datasheet PDF文件第4页 
KTC4075-O  
KTC4075-Y  
KTC4075-GR  
KTC4075-BL  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
NPN  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Plastic-Encapsulate  
Transistors  
·
·
Complementary to KTA2014  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
·
Halogen free available upon request by adding suffix "-HF"  
Maximum Ratings  
Symbol  
Rating  
Rating  
50  
60  
Unit  
V
SOT-323  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
A
V
5
V
D
C
150  
100  
150  
mA  
mW  
к
PC  
Collector power dissipation  
Junction Temperature  
TJ  
C
B
TSTG  
Storage Temperature  
-55 to +150  
к
E
B
F
E
Electrical Characteristics @ 25к Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
OFF CHARACTERISTICS  
H
G
J
ICBO  
Collector Cutoff Current  
(VCB= 60Vdc)  
---  
---  
---  
---  
100  
100  
nAdc  
nAdc  
K
IEBO  
Emitter Cutoff Current  
(VEB= 5.0Vdc)  
DIMENSIONS  
INCHES  
ON CHARACTERISTICS  
MM  
BVCBO  
BVCEO  
BVEBO  
hFE  
Collector-base breakdown voltage  
(IC=100µAdc)  
60  
---  
---  
Vdc  
Vdc  
Vdc  
---  
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.083  
.026 Nominal  
.047  
.012  
.000  
.035  
.004  
.006  
MAX  
.087  
.053  
.096  
MIN  
1.80  
1.15  
2.10  
MAX  
2.20  
1.35  
2.45  
NOTE  
Collector-emitter  
voltage (IC= 1mAdc)  
breakdown  
50  
5
---  
---  
---  
---  
0.65Nominal  
1.20  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
.100  
1.00  
.250  
.40  
F
.30  
.000  
.90  
.100  
.15  
Emitter-base breakdown voltage  
(IE=100µAdc)  
G
H
J
K
DC Current Gain  
(IC=2mAdc, VCE= 6.0Vdc)  
70  
---  
700  
Suggested Solder  
Pad Layout  
0.70  
VCE(sat)  
Collector Saturation Voltage  
(IC=100mAdc, IB=10.0mAdc)  
---  
---  
0.25  
Vdc  
pF  
Cob  
Output Capacitance  
(VCE= 10.0Vdc, IE=0, f=1.0MHz)  
---  
---  
---  
3.5  
---  
0.90  
fT  
Gain Bandwidth product  
(VCE=10Vdc, IC=1mAdc)  
80  
MHz  
1.90  
mm  
h
FE CLASSIFICATION  
0.65  
Rank  
Marking  
Range  
O
LO  
Y
LY  
120-240  
GR  
LG  
200-400  
BL  
0.65  
L
R
BL  
350-700  
70-140  
www.mccsemi.com  
1 of 4  
Revision: C  
2013/09/24  

与KTC4075-GR-TP相关器件

型号 品牌 获取价格 描述 数据表
KTC4075-GR-TP-HF MCC

获取价格

Small Signal Bipolar Transistor,
KTC4075M BL Galaxy Electrical

获取价格

45V,0.15A,General Purpose NPN Bipolar Transistor
KTC4075O CJ

获取价格

Transistor
KTC4075-O MCC

获取价格

NPN Plastic-Encapsulate Transistors
KTC4075-O-TP-HF MCC

获取价格

Small Signal Bipolar Transistor,
KTC4075-SOT-23 CJ

获取价格

TRANSISTOR(NPN )
KTC4075-SOT-323 CJ

获取价格

TRANSISTOR (NPN)
KTC4075T BL Galaxy Electrical

获取价格

50V,0.15A,General Purpose NPN Bipolar Transistor
KTC4075V KEC

获取价格

EPITAXIAL PLANAR NPN TRANSISTOR
KTC4075W BL Galaxy Electrical

获取价格

50V,0.15A,General Purpose NPN Bipolar Transistor