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KTC4075Y PDF预览

KTC4075Y

更新时间: 2024-11-18 21:04:15
品牌 Logo 应用领域
江苏长电/长晶 - CJ 开关光电二极管晶体管
页数 文件大小 规格书
1页 615K
描述
Transistor

KTC4075Y 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.59
最大集电极电流 (IC):0.15 A配置:Single
最小直流电流增益 (hFE):120最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.1 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):80 MHzBase Number Matches:1

KTC4075Y 数据手册

  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
SOT-23 Plastic-Encapsulate Transistors  
SOT-23  
KTC4075 TRANSISTOR (NPN)  
FEATURES  
1. BASE  
2. EMITTER  
3. COLLECTOR  
z
z
z
z
Excellent hFE linearity  
High hFE  
Low Noise  
Complementary to KTA2014  
MAXIMUM RATINGS(Ta=25unless otherwise noted)  
Symbol  
Parameter  
Value  
60  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
50  
V
5
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
150  
100  
150  
-55-150  
mA  
mW  
PC  
Tj  
Tstg  
Storage Temperature  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
Min  
Max  
Unit  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
V(BR)CBO IC = 100μA, IE=0  
60  
50  
5
V
V
V(BR)CEO IC = 1mA, IB=0  
V(BR)EBO  
ICBO  
IEBO  
hFE  
IE= 100μA, IC=0  
VCB=60V, IE=0  
V
0.1  
0.1  
μA  
μA  
VEB=5V, IC=0  
DC current gain  
VCE= 6V, IC=2mA  
IC=100mA, IB= 10mA  
VCE=10V, IC= 1mA  
VCE=10V, IE=0, f=1MHz  
70  
80  
700  
0.25  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat)  
fT  
V
MHz  
pF  
Collector output capacitance  
Noise figure  
Cob  
3.5  
10  
NF  
VCE=6V,IE=0.1mA, f=1KHz,RG=10KΩ  
dB  
CLASSIFICATION OF hFE  
Rank  
O
70~140  
LO  
Y
GR  
200~400  
LGR  
BL  
Range  
Marking  
120~240  
LY  
350~700  
LBL  
A,May,2011  

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